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Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06 |
Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Duarte, Juan P.; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.125 - 127, 2011-02 |
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