Browse "School of Electrical Engineering(전기및전자공학부)" by Subject retention
Showing results 1 to 12 of 12
| Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11 |
| Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory Pu, J; Kim, SJ; Lee, SH; Kim, YS; Kim, ST; Choi, KJ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690, 2008-07 |
| Cryogenic Storage Memory with High-Speed, Low-Power, and Long-Retention Performance Hur, Jae; Kang, Dongsuk; Moon, Dong-Il; Yu, Jiman; Choi, Yang-Kyu; Shimeng, Yu, ADVANCED ELECTRONIC MATERIALS, v.9, no.6, 2023-06 |
| High- κ 유전체를 사용한 Charge-trapping type플래쉬 메모리 소자에서 데이터 Retention 특성과 Erase 속도 개선 = Improvement of data retention and erase speed in charge-trapping type flash memory devices using high-κ dielectriclink 박종경; Park, Jong-Kyung; et al, 한국과학기술원, 2010 |
| Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications Kim, Woo-Young; Ka, Du-Youn; Kim, Dong-Soo; Kwon, Il-Woong; Kim, Sang-Youl; Lee, Yong-Soo; Lee, Hee-Chul, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.482 - 484, 2010-05 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Low-Cost and Highly Heat Controllable Capacitorless PiFET (Partially Insulated FET) 1T DRAM for Embedded Memory Bae, Dong-Il; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.8, no.1, pp.100 - 105, 2009-01 |
| Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications Jang, Weon-Wi; Lee, Jeong-Oen; Yang, Hyun-Ho; Yoon, Jun-Bo, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.10, pp.2785 - 2789, 2008-10 |
| P-type floating gate for retention and P/E window improvement of flash memory devices Shen, Chen; Pu, Jing; Li, Ming-Fu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1910 - 1917, 2007-08 |
| Retention Performance of Ferroelectric Polymer Film for Nonvolatile Memory Devices Kim, Woo-Young; Ka, Du-Youn; Cho, Byeong-Ok; Kim, Sang-Youl; Lee, Yong-Soo; Lee, Hee-Chul, IEEE ELECTRON DEVICE LETTERS, v.30, no.8, pp.822 - 824, 2009-08 |
| 단일트랜지스터형 FeRAM을 위한 MFIS 구조의 제작 및 특성분석에 관한 연구 = A study on fabrication and characterization of MFIS structure for single transistor type FeRAMlink 신창호; Shin, Chang-Ho; et al, 한국과학기술원, 2002 |
| 자기조립 단분자막을 통한 향상된 유지 시간을 갖는 C60 나노 부유 게이트 메모리 = C60 nano-floating gate memory with improved retention time via self-assembled monolayerlink 이승원; Lee, Seung-Won; et al, 한국과학기술원, 2012 |
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