Showing results 1 to 7 of 7
Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery Jeong, Yonghee; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, JOURNAL OF ELECTRONIC MATERIALS, v.52, no.6, pp.3914 - 3920, 2023-06 |
Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor Kim, Sungho; Choi, ShinHyun; Lu, Wei, ACS NANO, v.8, no.3, pp.2369 - 2376, 2014-03 |
Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08 |
Effects of the oxygen vacancy concentration in InGaZnO-Based RRAM = InGaZnO물질기반의 RRAM 소자에 산소 결핍 농도의 효과에 관한 연구link Kim, Moon-Seok; 김문석; et al, 한국과학기술원, 2013 |
Oxide Heterostructure Resistive Memory Yang, Yuchao; Choi, ShinHyun; Lu, Wei, NANO LETTERS, v.13, no.6, pp.2908 - 2915, 2013-06 |
Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping Kim, Sungho; Choi, ShinHyun; Lee, Jihang; Lu, Wei D., ACS NANO, v.8, no.10, pp.10262 - 10269, 2014-10 |
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