Browse "School of Electrical Engineering(전기및전자공학부)" bySubjectinterlayer

Showing results 1 to 4 of 4

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jinresearcher; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06

Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films

Yim, Munhyuk; Jeon, Buil; Yoon, Giwanresearcher, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.2, pp.233 - 238, 2019-04

Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

Chandramohan, S.; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; et al, ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964, 2013-02

Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain

Shin, Changho; Kim, Jeong-Kyu; Kim, Gwang-Sik; Lee, Hyunjae; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jinresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.11, pp.4167 - 4172, 2016-11



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