Browse "School of Electrical Engineering(전기및전자공학부)" by Subject capacitorless 1T-DRAM

Showing results 1 to 6 of 6

1
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04

2
Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

Moon, Dong-Il; Kim, Jee Yeon; Moon, Joon-Bae; Kim, Dong-Oh; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65, 2014-01

3
Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET

Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09

4
Fully Depleted Polysilicon TFTs for Capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Kim, Chung-Jin; Kim, Sung-Ho; Moon, Dong-Il; Choi, Sung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.742 - 744, 2009-07

5
Parasitic BJT Read Method for High-Performance Capacitorless 1T-DRAM Mode in Unified RAM

Han, Jin-Woo; Moon, Dong-Il; Kim, Dong-H; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1108 - 1110, 2009-10

6
Unified random access memory with nanowire and energy band engineering = 에너지 밴드 엔지니어링 및 나노와이어 기반의 융합메모리link

Han, Jin-Woo; 한진우; et al, 한국과학기술원, 2010

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