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Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

Jang, DH; Lee, JK; Park, KH; Cho, HS; Seong, TY; Park, Chul Soonresearcher; Pyun, KE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.36, no.10B, pp.L1364 - L1366, 1997-10

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