Showing results 1 to 17 of 17
A comparison of Ga:ZnO and Ga:ZnO/Ag/Ga:ZnO source/drain electrodes for In-Ga-Zn-O thin film transistors Choi, Kwang-Hyuk; Jeon, Sanghun; Kim, Han-Ki, MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2915 - 2918, 2012-10 |
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
Chemical sensors based on nanostructured materials Huang, Xing-Jiu; Choi, Yang-Kyu, SENSORS AND ACTUATORS B-CHEMICAL, v.122, no.2, pp.659 - 671, 2007-03 |
Controlling the diameters and field emission properties of vertically aligned carbon nanotubes synthesized by thermal chemical vapor deposition Choi, SY; Kang, YI; Cho, KI; Choi, KS; Kim, D, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.193 - 196, 2001-12 |
Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces Park, KH; Ha, JS; Yun, WS; Shin, Mincheol; Ko, YJ, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.18, no.5, pp.2365 - 2370, 2000 |
Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface Park, KH; Shin, Mincheol; Ha, JS; Yun, WS; Ko, YJ, APPLIED PHYSICS LETTERS, v.75, no.1, pp.139 - 141, 1999-07 |
High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier Lee, SJ; Noh, SK; Choe, JW; Lee, UH; Hong, Songcheol; Lee, JI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.3, pp.1218 - 1220, 2004-03 |
Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; et al, ACS APPLIED MATERIALS & INTERFACES, v.10, no.18, pp.15829 - 15840, 2018-05 |
Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers Lee, SJ; Noh, SK; Hong, Songcheol; Lee, JI, CURRENT APPLIED PHYSICS, v.6, no.1, pp.37 - 40, 2006-01 |
Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays Jung Inn Sohn; Seonghoon Lee; Yoon-Ho Song; Choi, Sung-Yool; Kyoung-Ik Cho; Kee-Soo Nam, APPLIED PHYSICS LETTERS, v.78, no.7, pp.901 - 903, 2001-02 |
Physical Observation of a Thermo-Morphic Transition in a Silicon Nanowire Choi, Sung-Jin; Moon, Dong-Il; Duarte, Juan P.; Ahn, Jae-Hyuk; Choi, Yang-Kyu, ACS NANO, v.6, no.3, pp.2378 - 2384, 2012-03 |
Plasma induced type conversion in mercury cadmium telluride Agnihotri, OP; Lee, Hee Chul; Yang, KD, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.10, pp.11 - 19, 2002-10 |
Strongly (001)-textured MgO/Co40Fe40B20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering Lee, Soogil; Kim, Sanghoon; Son, Jangyup; Baek, Seung-heon Chris; Lee, Seok-Hee; Hong, Jongill, APPLIED PHYSICS EXPRESS, v.9, no.4, 2016-04 |
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; Kim, Bong Ho; Ahn, Seung-Yeop; Kim, SangHyeon, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06 |
Towards Colorless Transparent Organic Transistors: Potential of Benzothieno[3,2-b] benzothiophene-Based Wide-Gap Semiconductors Moon, Hanul; Cho, Hyunsu; Kim, Mincheol; Takimiya, Kazuo; Yoo, Seunghyup, ADVANCED MATERIALS, v.26, no.19, pp.3105 - 3110, 2014-02 |
Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays Lee, Sungsik; Jeon, Sanghun; Chaji, Reza; Nathan, Arokia, PROCEEDINGS OF THE IEEE, v.103, no.4, pp.644 - 664, 2015-04 |
Ultrasensitive WSe2/alpha-In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect Jin, Hyeok Jun; Park, Cheolmin; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, ADVANCED MATERIALS TECHNOLOGIES, v.6, no.11, pp.2100494, 2021-11 |
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