Browse "School of Electrical Engineering(전기및전자공학부)" by Subject RETENTION
Showing results 1 to 12 of 12
| A method of controlling the imprint effect in hafnia ferroelectric device Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; Jeong, Yeongseok; Kim, Giuk; Qin, Yixin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01 |
| A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor Hur, Jae; Jang, Byung Chul; Park, Jihun; Moon, Dong-Il; Bae, Hagyoul; Park, Jun-Young; Kim, Gun-Hee; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11 |
| Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices Chang, M.; Hwang, H.; Jeon, Sanghun., APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
| Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application Ryu, Seong-Wan; Lee, Jong-Won; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382, 2009-03 |
| Graphene Gate Electrode for MOS Structure-Based Electronic Devices Park, Jong-Kyung; Song, Seung-Min; Mun, Jeong-Hun; Cho, Byung-Jin, NANO LETTERS, v.11, no.12, pp.5383 - 5386, 2011-12 |
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| Improvement of the multi-level cell performance by a soft program method in flash memory devices Park, Jong Kyung; Lee, Ki-Hong; Pyi, Seung Ho; Lee, Seok-Hee; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.94, pp.86 - 90, 2014-04 |
| Investigation of Physically Unclonable Functions Using Flash Memory for Integrated Circuit Authentication Kim, Moon-Seok; Moon, Dong-Il; Yoo, Sangkyung; Lee, Sang-Han; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.14, no.2, pp.384 - 389, 2015-03 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03 |
| Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082, 2017-08 |
| Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications Jeon, Sanghun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H412 - H415, 2009 |
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