Browse "School of Electrical Engineering(전기및전자공학부)" bySubjectPMOSFETS

Showing results 1 to 3 of 3

Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Chim, WK; Cho, Byung Jinresearcher; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01

Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheolresearcher, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03

Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications

Mheen, B; Song, YJ; Kang, JY; Hong, Songcheolresearcher, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08



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