Browse "School of Electrical Engineering(전기및전자공학부)" bySubjectN2O

Showing results 1 to 4 of 4

1
Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications

Yoon, Giwanresearcher; Epstein, Y, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.5, pp.1679 - 1683, 1998-05

2
Development of FBAR devices based on nitrogen-incorporated zno films = 질소를 함유한 산화아연(ZnO) 박막에 기반한 FBAR 소자 개발link

Zhang, Ruirui; Zhang, R.; et al, 한국과학기술원, 2010

3
Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity

Cho, Byung Jinresearcher; Ko, LH; Nga, YA; Chan, LH, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.11, pp.4259 - 4262, 1999-11

4
Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure

Yoon, Giwanresearcher; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04

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