Browse "School of Electrical Engineering(전기및전자공학부)" bySubjectJoule heat

Showing results 1 to 17 of 17

1
A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

Park, Jun-Young; Lee, Geon-Beom; Choi, Yang-Kyuresearcher, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.954 - 958, 2019-08

2
A Novel Technique for Curing Hot-CarrierInduced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Lee, Geon-Beom; Kim, Choong-Ki; Park, Jun-Young; Bang, Tewook; Bae, Hagyoul; Kim, Seong-Yeon; Ryu, Seung-Wan; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1012 - 1014, 2017-08

3
Analysis of Damage Curing in a MOSFET with Joule Heat Generated by Forward Junction Current at the Source and Drain

Lee, Geon-Beom; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Park, Jun-Young; Choi, Yang-Kyuresearcher, MICROELECTRONICS RELIABILITY, v.104, 2020-01

4
Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage

Park, Jun-Young; Hur, Jae; Choi, Yang-Kyuresearcher, IEEE ELECTRON DEVICE LETTERS, v.39, no.2, pp.180 - 183, 2018-02

5
Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory

Yu, Ji-Man; Park, Jun-Young; Lee, Geon-Beom; Han, Joon-Kyu; Kim, Myung-Su; Hur, Jae; Yun, Dae-Hwan; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113, 2019-10

6
Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory

Kim, Myung-Su; Ahn, Dae-Chul; Park, Jun-Young; Seo, Myungsoo; Kim, Seong-Yeon; Kim, Wu-Kang; Yun, Dae-Hwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199, 2019-02

7
Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.36, pp.23820 - 23826, 2016-09

8
Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MOS2 Field-Effect Transistor

Han, Joon-Kyu; Park, Jun-Young; Kim, Choong-Ki; Kwon, Jeong Hyun; Kim, Myeong-Soo; Hwang, Byeong Woon; Kim, Da-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.10, pp.1532 - 1535, 2018-10

9
Eletrothermal analysis of poly-si nanowire and its application to localized annealing of gate-all-around field-effect transistor = 폴리실리콘 나노와이어의 전기적, 열적 특성분석 및 이를 바탕으로 한 트랜지스터에의 응용link

Park, Jun-Young; 박준영; et al, 한국과학기술원, 2016

10
Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07

11
Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyuresearcher, ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4838 - 4843, 2018-02

12
Power Reduction for Recovery of a FinFET by Electrothermal Annealing

Han, Joon-Kyu; Park, Jun-Young; Choi, Yang-Kyuresearcher, SOLID-STATE ELECTRONICS, v.151, pp.6 - 10, 2019-01

13
Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03

14
Triboelectric nanogenerator for a repairable transistor with self-powered electro-thermal annealing

Kim, Weon-Guk; Han, Joon-Kyu; Tcho, Il-Woong; Park, Jun-Young; Yu, Ji-Man; Choi, Yang-Kyuresearcher, NANO ENERGY, v.76, pp.105000, 2020-10

15
Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation

Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02

16
Ultra-fast erase method of SONOS flash memory by instantaneous thermal excitation = 열적 여기 현상을 이용한 빠른 동작속도의 전하 트랩형 플래시 메모리에 관한 연구link

Ahn, Dae-Chul; 안대철; et al, 한국과학기술원, 2016

17
저온 공정 a-IGZO 투명 유연 박막 트랜지스터의 특성 및 신뢰성 향상을 위한 줄 발열 열처리 = Electro-thermal annealing for advanced performance and stabilities of low temperature fabricated transparent and flexible a-IGZO thin film transistorslink

이명근; 최경철; Choi, Kyung Cheol; 박상희; et al, 한국과학기술원, 2017

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