Browse "School of Electrical Engineering(전기및전자공학부)" by Author East, J. R.
Showing results 4 to 7 of 7
| InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE Yang, Kyounghoon; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04 |
| InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16 |
| Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11 |
| Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01 |
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