Browse "School of Electrical Engineering(전기및전자공학부)" by Author Ahn, Dae-Chul
Showing results 4 to 16 of 16
| Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory Kim, Myung-Su; Ahn, Dae-Chul; Park, Jun-Young; Seo, Myungsoo; Kim, Seong-Yeon; Kim, Wu-Kang; Yun, Dae-Hwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199, 2019-02 |
| First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jin-Su; Choi, Bong-Sik; Park, Jun-Young; Ahn, Dae-Chul; Kim, Choong-Ki; et al, International Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), 2016-12-05 |
| Impact of crystalline damage on a vertically integrated junctionless nanowire transistor Ahn, Dae-Chul; Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Bang, Tewook; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.109, no.18, 2016-10 |
| Improved Split C-V Technique for Accurate Extraction of Mobility by Considering Effective Inversion Charges in p-Channel Si0.8Ge0.2 MOSFET Bang, Te-Wook; Bae, Hagyoul; Kim, Choong-Ki; Hur, Jae; Park, Jun-Young; Ahn, Dae-Chul; Kim, Gun-Hee; et al, 한국 반도체 학술 대회, 한국 반도체 학술 대회, 2016-02-23 |
| Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05 |
| Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01 |
| Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jinsu; Ahn, Dae-Chul; Park, Jun-Young; Hur, Jae; Kim, Myung-Su; et al, ACS NANO, v.10, no.12, pp.10894 - 10900, 2016-12 |
| Triboelectrification driven fin-fact (flip-flop actuated channel transistor) for security application Kim, Daewon; Ahn, Dae-Chul; Allen, Mark G.; Choi, Yang-Kyu, 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017, pp.171 - 174, Institute of Electrical and Electronics Engineers Inc., 2017-01 |
| Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02 |
| Ultra-fast erase method of SONOS flash memory by instantaneous thermal excitation = 열적 여기 현상을 이용한 빠른 동작속도의 전하 트랩형 플래시 메모리에 관한 연구link Ahn, Dae-Chul; 안대철; et al, 한국과학기술원, 2016 |
| Vertically Integrated Nanowire-Based Unified Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu, NANO LETTERS, v.16, no.9, pp.5909 - 5916, 2016-09 |
Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Choi, Yang-Kyu, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.1, pp.Q1 - Q5, 2017 |
| Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05 |
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