Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380

Showing results 152 to 211 of 214

152
p+ n shallow junction formation from BN source using RTP

조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.77 - 77, 1987-05-12

153
Pentacene Thin-Film Transistors with PVP/HfLaO Hybrid Gate Dielectric for Low Voltage Operation

Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-08

154
Photoluminescene from silicon nanocrystals formed by pulsed laser deposition

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Song, WD; Hu, H, MRS Symposium, pp.13 - 13, 2003-04-22

155
Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11

156
Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Cho, Byung Jin; Guan, H; Li, MF; Zhang, Y; Jie, BB; Xie, J; Wang, JLF, 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp.20 - 20, 1999-10-15

157
Process and Structural Optimization of a Planar-Type Thermoelectric Power Generator by Screen-Printing Technique

We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, Int'l Thermoelectrics Society, 2012-07-09

158
Process Control and Uniformity Improvement in Synthesis of Large-scale Graphene Layers on Metal Thin Films.

Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-09

159
Process optimization for multiple-pulse laser annealing of boron implanted silicon with germanium pre-amorphization

Cho, Byung Jin; Poon, D; Lu, YF; Bhat, M; See, A, MRS Spring Meeting, pp.0 - 0, 2003-04-22

160
Process Optimization of Screen-printed Thermoelectric Thick-films for Flexible Thermoelectric Devices

Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K; Cho, Byung-Jin, The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment, The Korean Institute of Metals and Materials, 2016-11-07

161
Progressive breakdown statistics in ultra-thin silicon dioxides

Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08

162
Properties of graphene on different dielectrics and graphene oxide based flexible resistive memory

Cho, Byung Jin, Recent Advances in Graphene and Related Materials 2010, Engineering Conferences International, Recent Advances in Graphene and Related Materials 2010, 2010-08-04

163
Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface

Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11

164
PVP/GO:Graphene/Polymer composite film as a Cu diffusion barrier

김재환; 윤성준; 봉재훈; 윤알렉산더; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-14

165
PVP/GO:Graphene/polymer composite film as a Cu diffusion barrier

Kim, Jae Hwan; Yoon, Seong Jun; Bong, Jae Hoon; Yoon, Alexander; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

166
Quasi-breakdown of ultra thin gate oxide under high field stress

Cho, Byung Jin; Lee, SH; Kim, JC; Choi, SH, IEEE International Electron Devices Meeting (IEDM), pp.605 - 605, 1994-12-11

167
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05

168
Rare earth oxide (Gd2O3) s a blocking layer in SONOS-type nonvolatile memory devices for high speed operation

조병진; Pu, J; Kim, SJ; Kim, YS, 한국반도체 학술대회, pp.615 - 616, 2008

169
Realization of a Wearable Thermoelectric Power Generator by Screen-Printing Technique for Human Body Applications

We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, 2nd ENGE 2012 (Int'l Conference on Electrical Materials and Nanotechnology for Green Environment), The korean Institute of Metals and Materials, 2012-09-19

170
Recent progress and technical issues of the application of graphene to electronic devices

Cho, Byung Jin, SEMI Technology Symposium 2013, SEMI Korea, 2013-01

171
Recent progress of graphene based FET device technology

조병진, 한국공업화학회 2012 추계학술대회, 한국공업화학회, 2012-11

172
Recent progress on application of graphene to MOS devices

조병진, Nano Korea 2012 (The 10th Int'l Nanotech Symposium & Nano-Convergence Expo in Korea, Ministry of Knowledge Economy, 2012-08

173
Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack

Cho, Byung Jin; Joo, MS; Balasubramanian, N; Kwong, DL, International Conference on Materials for Advanced Technologies, pp.40 - 40, 2005-07-03

174
Roles of primary hothole and FN electron fluences in gate oxide breakdown

Cho, Byung Jin; Li, MF; He, YD; Ma, SG; Lo, KF; Xu, MZ, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, pp.0 - 0, 1999-11-29

175
Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics

Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC; Gu, HL, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09

176
Seeding ALD of high-k gate dielectric in CVD graphene FETs for enhanced device performance and reliability

Shin, Woo Cheol; Cho, Byung Jin, Graphene Week 2012, 2012-06

177
Sidewall-sealed double LOCOS isolation structure with defect-free isolation recess

Cho, Byung Jin; Kim, YB; Jang, SA; Kim, JC, 43rd Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp.730 - 730, 1996-03-28

178
Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Hu, H, MRS Symposium, pp.19 - 19, 2003-04-21

179
Simultaneous measurements of Seebeck coefficient and thermal conductivity across thermoelectric film

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 32nd International Conference on Thermoelectrics, Thermoelectrics Society, 2013-07-01

180
SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

He, W.; Chan, D.S.H.; Cho, Byung Jin, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, pp.835 - 838, 2008-10-20

181
Stability Enhancement of Graphene Field Effect Transistors By Employing Ultrathin Amorphous Fluoropolymer Interface Layer

Shin, Woo Cheol; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

182
Strain Analysis of a Single-crystalline Silicon Membrane using FEM Simulation

Kim, Choelgyu; Bong, JH; Hwang, WS; Cho, Byung Jin; Kim, Taek Soo, MPC 2016 Autumn Symposium, MPC, 2016-09-23

183
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03

184
Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application

Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11

185
Study on nonvolatile byproducts generated during etching of advanced gate stacks

Cho, Byung Jin; Hwang, WS; Chan, DSH; Yoo, WJ, 28th International Symposium on Dry Process, pp.0 - 0, 2006-11-29

186
Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

Cho, Byung Jin; Park, CS; Tang, LJ; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2004-12-13

187
Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET

Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Zhu, HC; Liew, YF, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

188
Surface passivation using silane for epitaxial growth of graphene on SiC substrate

Kang, B.-J.; Lim, S.-K.; Cho, Byung Jin, 1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society, v.19, pp.125 - 130, 2009-05-25

189
Surface Pre-Treatment for Epitaxial Growth of Graphene on SiC Substrate

조병진; Seo, JH; Kang, BJ, 16th Korean Conference on Semiconductors, 2009-02-20

190
Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Liew, YF; Kwong, DL, IEEE-Nanotech 2007, pp.0 - 0, 2007-08-02

191
Synthesis of large-scale graphene layers on metal thin films and application to electronic devices

Cho, Byung Jin; Mun, Jeong Hun; Song, Seung Min; Noh, Young Dal; Kang, Byung Jin, International Conference on Electronic Materials 2010, International Union of Materials Research Societies, 2010-08

192
Synthesis of wafer scale graphene layer for future electronic devices

Cho, Byung Jin, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, pp.65 - 67, IEICE, 2010-07-01

193
Technical challenges in Front-End Processes for next generation CMOS devices

Cho, Byung Jin, AMSEA ET (Applied Materials South East Asia Engineering & Technology) Conference 2005, pp.0 - 0, 2005-08-07

194
Technical Issues and Recent Progress on Graphene-based RF MOSFET

Cho, Byung Jin, IEEE Topical Symposium on RF Nanotechnology, IEEE, 2012-05

195
The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate

Cho, Byung Jin; Loh, WY; Majhi, P; Lee, SH; Oh, JW; Sassman, B; Young, C; et al, 2008 Symposium on VLSI Technology, pp.56 - 57, 2008-06-17

196
The effect of Interfacial Layer of High-K Dielectrics on GaAs Substrate

Cho, Byung Jin; Tong, Y; Dalapati, GK; Oh, HJ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

197
The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process

Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp.32 - 32, 1998-08-29

198
The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

Loh, W.-Y.; Majhi, P.; Lee, S.-H.; Oh, J.-W.; Sassman, B.; Young, C.; Bersuker, G.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.56 - 57, 2008-06-17

199
Thermoelectric Properties of p-type Sb2Te3 and n-type Bi2Te3 Thick Films Deposited by Screen-Printing Technique

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, 2nd ENGE 2012 (Int'l Conference on Electrical Materials and Nanotechnology for Green Environment), The korean Institute of Metals and Materials, 2012-09-19

200
Thin Film Thermoelectric Module using Screen Print Method

Cho, Byung Jin; Choi, Kyung Cheol, 29th International Conference on Thermoelectrics, 29th International Conference on Thermoelectrics, 2010-05-31

201
Three Dimensional Integration of Graphene and Silicon CMOS Hybrid Circuits

Hong, Seul Ki; Oh, Joong Gun; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

202
Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer

Cho, Byung Jin; Park, CS; Tang, LJ; Wang, W; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14

203
Tunable Dirac Voltage of Graphene Field Effect Transistors With Hafnium Lanthanum Oxide Gate Dielectric

Oh, Joong Gun; Shin, Yun Sang; Shin, Woo Cheol; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

204
Very light nitridation of thin gate oxide in low pressure N2O

Cho, Byung Jin; Joo, MS; Lee, SH; Kim, JC; Choi, SH, 3rd Symp. on Silicon Nitride and Silicon Dioxide Thin Insulation Films, pp.458 - 458, 1994-05-08

205
Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics

Cho, Byung Jin; Huang, CH; Yang, MY; Chin, A; Chen, WJ; Zhu, CX; Li, MF, Symposium on VLSI Technology, pp.119 - 119, 2003-06-11

206
Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction

Cho, Byung Jin; Zhu, C; Hu, H; Yang, XF; Kim, SJ; Chin, A, International Electron Device Meeting (IEDM), pp.0 - 0, IEEE International Electron Devices, 2003-12-08

207
Wafer temperature simulation and control algorithm in RTA system

조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.0 - 0, 1987-05-12

208
Work function shifts of monolayer and few layers of graphene under metal electrodes

Song, Seung Min; Bong, Jae Hoon; Cho, Byung Jin, Graphene 2014, Graphene 2014, 2014-05-06

209
ZT Enhancement in Screen-Printed Bi2Te2.7Se0.3 Thick Film via Post Annealing Process

Kim, Sun Jin; Kim, Yongjun; Choi, Hyeongdo; We, Ju Hyung; Shin, Ji Seon; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-01

210
그래핀 기반의 유연저항 메모리 소자의 제작과 동작원리에 관한 연구

홍슬기; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

211
그래핀/게이트 절연막의 계면 제어를 통한 그래핀 전계 효과 트랜지스터의 전기적 성능 및 안정성 향상

신우철; 김택용; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

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