Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380
Showing results 108 to 167 of 214
| Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices Cho, Byung Jin, 2007 MRS Spring Meeting, pp.0 - 0, MRS, 2007-04-09 |
| Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices Cho, Byung Jin; Zang, H; Loh, WY; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| Improvement in Contact Resistance of Screen-printed Bi2Te2.7Se0.3 Thick Films by Annealing in a Reduction Ambient Kim, Yongjun; Kim, Sun Jin; Choi, Hyeongdo; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-02 |
| Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device 조병진, 17th Korean Conference on Semiconductors, 17th Korean Conference on Semiconductors, 2010-02-25 |
| Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping Cho, Byung Jin; Shen, C; Pu, J; Li, MF, IEEE 2nd International conference on memory technology and design, pp.99 - 101, 2007-03-07 |
| Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device Cho, Byung Jin, 2010 International Conference on Solid State Devices and Materials, SSDM 2010, 2010-09-23 |
| Inorganic-based High-Performance Flexible Thermoelectric Power Generator for Wearable Electronics Application Cho, Byung Jin; Kim, Sun Jin; We, Ju Hyung; Choi, Hyeongdo; Kim, Yongjun; Shin, Ji Sun, The 18th International Symposium on the Physics of Semiconductors and Applications, Semiconductor Physics Division of the Korean Physical Society, 2016-07-05 |
| Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon Cho, Byung Jin; Zang, H; Loh, WY; Ye, JD; Loh, TH; Lo, GQ, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18 |
| Integration of Dual Metal Gate/High-K dielectric Stacks for Fermi-Level Pinning Free Cho, Byung Jin, The 2nd International Workshop on Nanoscale Semiconductor Devices, pp.253 - 279, 2005-06-02 |
| Integration of high-K gate dielectric into high mobility substrate Cho, Byung Jin; Loh, WP; Zang, H; Dalapati, GK; Tong, Y; Choi, KJ, 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES SCIENCE AND TECHNOLOGY, pp.8 - 10, 2006-11-10 |
| Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform Cho, Byung Jin; Wang, J; Loh, WY; Zang, H; Yu, MB; Chua, KT; Loh, TH, 4th International Conference on Group IV Photonics, pp.0 - 0, 2007-09-19 |
| Integrity of gate oxides irradiated under electron-beam lithography conditions Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08 |
| Interfacial adhesion and diffusion barrier characteristics of synthesized graphene Yoon, Taeshik; Cho, Byung Jin; Kim, Taek-Soo, 2014 The World Conference on Carbon, Carbon, 2014-07-03 |
| Interpretation of rapid thermal diffusion of phosphorus into silicon 조병진; Kim, CK, Semiconductor Workshop for Young Engineers, pp.0 - 0, 1991-03-05 |
| Investigation of process dependence of graphene growth on nickel thin film Cho, Byung Jin; Mun, JH; Hwang, C; Lim, SK, 56th AVS symposium, 2009-11-09 |
| Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application Cho, Byung Jin; Hang, H; Ding, SJ; Zhu, C; Rustagi, RC; Lu, YF; Li, MF, International semiconductor device research symposium, pp.0 - 0, 2003-12-10 |
| Investigation of quasi-breakdown mechanism in ultrathin gate oxides Cho, Byung Jin; He, YD; Guan, H; Li, MF; Dong, Z, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., pp.0 - 0, 1999-11-29 |
| Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Abstract Proc. of the Asia-Pacific SIA'98 Conf., pp.0 - 0, 1998-11-30 |
| Investigation on Material Properties of Screen-printed Thermoelectric Thick films Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-01 |
| Issues on Metal Contact and Gate Electrode of Graphene Based FET Cho, Byung Jin; Song, SM; Park, JK, The 4th International Conference on Recent Progress in Graphene Research (RPGR 2012), Institute of Physics (IOP), 2012-10 |
| Low Cost and Flexible Non-Volatile Memory Using Oxidized Graphene and Analysis of Its Switching Mechanism Hong, Seul Ki; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05 |
| LOW-COST THERMOELECTRIC POWER GENERATOR USING SCREEN PRINTING TECHNIQUE Cho, Byung Jin; We, Ju Hyung; Kim, Sun Jin, 4th Molecular Materials Meeting (M3), Institute of Materials Research and Engineering, 2014-01-16 |
| Material and electrical characterization of HfO2 films for MIM capacitors applications Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22 |
| Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT Huang, J.; Kirsch, P.D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.82 - 83, 2008-06-17 |
| Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process Cho, Byung Jin; Hwang, WS; Chan, DSH, IEEE 4th International Symposium on Advanced Gate Stack Technology, pp.0 - 0, 2007-09-10 |
| Metal Electrode (Panel Presentation) Cho, Byung Jin, Proceedings on 2nd International Symposium on Advanced Gate Stack Technology, pp.15 - 19, 2005-09-05 |
| Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08 |
| Metal-Germanium contacts with Graphene Interfacial Layer 서유진; 오중건; 김택용; 조병진; Lee, Seok-Hee, International Conference on Electronic Materials and Nanotechnlogy for Green Engvironment, Korean Institute of Metals and Materials, 2012-09-18 |
| MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21 |
| MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| Modeling of Thermal Conductivity Extraction of Thin Film Thermoelectric Materials Using a Screen Printing Technique We, Ju Hyung; Kim, Sun Jin; Cho, Byung Jin, 6th Annual Energy Harvesting Workshop, 2011-08 |
| Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization Cho, Byung Jin; Poon, D; Tan, LS; Bhat, M; See, A, IEEE 4th International Workshop on Junction Technology (IWJT-2004), pp.22 - 26, 2004-03-15 |
| N-doped graphene aerogel loudspeaker Kim, Choong Sun; Lee, Kyung Eun; Kim, Sang Ouk; Choi, Jung Woo; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27 |
| New breakdown mechanism of ultra thin gate oxides under ballistic transport Cho, Byung Jin; Lee, SH; Joo, MS; Park, YJ; Kim, JC, 1st Korean Semiconductor Tech. Symp., pp.0 - 0, 1994-02-15 |
| New reliability issues of CMOS transistors with 1.3 nm gate oxide Cho, Byung Jin; Li, MF; Chen, G; Loh, WY; Kwong, DL, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp.0 - 0, 2003-04-28 |
| New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz Cho, Byung Jin; Chin, A; Mei, P; Zhu, C; Li, MF; Lee, S; Yoo, WJ, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, pp.0 - 0, 2003-11-13 |
| Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03 |
| Non-volatile Flexible ReRAM based on graphene oxide 조병진, IEEK Summer Conference 2010, IEEK Summer Conference 2010, 2010-06-16 |
| Non-Volatile Memory Using Graphene Oxide for Flexible Electronics Cho, Byung Jin, 10th International Conference on Nanotechnology (IEEE NANO 2010), IEEE, 2010-08-18 |
| Novel oxynitridation technology for highly reliable thin dielectrics Cho, Byung Jin; Joo, MS; Lee, SH; Lee, SK; KIm, JC; Choi, SH, Symp. on VLSI Tech., pp.107 - 107, 1995-06-07 |
| Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application Cho, Byung Jin; Zhang, G; Hwang, WS; Bobade, SM; Lee, SH; Yoo, WJ, International Electron Device Meeting (IEDM) 2007, pp.0 - 0, 2007-12-01 |
| Optimization of Annealing Process of Screen Printed Sb2Te3 and Bi2Te3 Thick Films for Power Generator Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, ICT/ECT2012, Int'l Thermoelectrics Society, 2012-07-09 |
| Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors Shin, W.C.; Moon, H.; Yoo, S.; Cho, Byung Jin, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.936 - 939, IEEE, 2010-08-17 |
| p+ n shallow junction formation from BN source using RTP 조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.77 - 77, 1987-05-12 |
| Pentacene Thin-Film Transistors with PVP/HfLaO Hybrid Gate Dielectric for Low Voltage Operation Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-08 |
| Photoluminescene from silicon nanocrystals formed by pulsed laser deposition Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Song, WD; Hu, H, MRS Symposium, pp.13 - 13, 2003-04-22 |
| Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11 |
| Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique Cho, Byung Jin; Guan, H; Li, MF; Zhang, Y; Jie, BB; Xie, J; Wang, JLF, 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp.20 - 20, 1999-10-15 |
| Process and Structural Optimization of a Planar-Type Thermoelectric Power Generator by Screen-Printing Technique We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, Int'l Thermoelectrics Society, 2012-07-09 |
| Process Control and Uniformity Improvement in Synthesis of Large-scale Graphene Layers on Metal Thin Films. Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-09 |
| Process optimization for multiple-pulse laser annealing of boron implanted silicon with germanium pre-amorphization Cho, Byung Jin; Poon, D; Lu, YF; Bhat, M; See, A, MRS Spring Meeting, pp.0 - 0, 2003-04-22 |
| Process Optimization of Screen-printed Thermoelectric Thick-films for Flexible Thermoelectric Devices Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K; Cho, Byung-Jin, The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment, The Korean Institute of Metals and Materials, 2016-11-07 |
| Progressive breakdown statistics in ultra-thin silicon dioxides Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08 |
| Properties of graphene on different dielectrics and graphene oxide based flexible resistive memory Cho, Byung Jin, Recent Advances in Graphene and Related Materials 2010, Engineering Conferences International, Recent Advances in Graphene and Related Materials 2010, 2010-08-04 |
| Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
| PVP/GO:Graphene/Polymer composite film as a Cu diffusion barrier 김재환; 윤성준; 봉재훈; 윤알렉산더; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-14 |
| PVP/GO:Graphene/polymer composite film as a Cu diffusion barrier Kim, Jae Hwan; Yoon, Seong Jun; Bong, Jae Hoon; Yoon, Alexander; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27 |
| Quasi-breakdown of ultra thin gate oxide under high field stress Cho, Byung Jin; Lee, SH; Kim, JC; Choi, SH, IEEE International Electron Devices Meeting (IEDM), pp.605 - 605, 1994-12-11 |
| Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05 |
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