Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380

Showing results 97 to 156 of 214

97
Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies

Cho, Byung Jin; Kim, SJ; Li, MF; Yu, MB, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15

98
HfLaO 절연막을 이용한 그래핀 전계효과 트랜지스터의 Dirac 전압 조율

오중건; 신윤상; 신우철; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

99
HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications

Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10

100
High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application

Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14

101
High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node

Cho, Byung Jin; Suthram, S; Majhi, P; Sun, G; Kalra, P; Harris, HR; Choi, KJ, International Electron Devices Meeting, pp.727 - 730, 2007

102
High performance RF MOSFETs and passive devices on Si

Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15

103
High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics

오중건; 박관용; 김충선; 임성갑; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-15

104
High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack

Cho, Byung Jin; Yang, WF; Lee, SJ; Whang, SJ; Lim, SY; Kwong, DL, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18

105
High-K Dielectrics for Charge Trap - type Flash Memory Application

Cho, Byung Jin; He, W; Pu, J, 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, pp.37 - 41, 2008-07-09

106
High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation

Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Sig, JM; Hau, NT, International Electron Device Meeting (IEDM), December 2004, pp.889 - 892, 2004-12-13

107
High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications

Cho, Byung Jin; Hu, H; Ding, SJ; Lim, HF; Zhu, C; Li, MF; Kim, SJ, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08

108
Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices

Cho, Byung Jin, 2007 MRS Spring Meeting, pp.0 - 0, MRS, 2007-04-09

109
Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

Cho, Byung Jin; Zang, H; Loh, WY; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

110
Improvement in Contact Resistance of Screen-printed Bi2Te2.7Se0.3 Thick Films by Annealing in a Reduction Ambient

Kim, Yongjun; Kim, Sun Jin; Choi, Hyeongdo; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-02

111
Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device

조병진, 17th Korean Conference on Semiconductors, 17th Korean Conference on Semiconductors, 2010-02-25

112
Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping

Cho, Byung Jin; Shen, C; Pu, J; Li, MF, IEEE 2nd International conference on memory technology and design, pp.99 - 101, 2007-03-07

113
Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool

Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

114
In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device

Cho, Byung Jin, 2010 International Conference on Solid State Devices and Materials, SSDM 2010, 2010-09-23

115
Inorganic-based High-Performance Flexible Thermoelectric Power Generator for Wearable Electronics Application

Cho, Byung Jin; Kim, Sun Jin; We, Ju Hyung; Choi, Hyeongdo; Kim, Yongjun; Shin, Ji Sun, The 18th International Symposium on the Physics of Semiconductors and Applications, Semiconductor Physics Division of the Korean Physical Society, 2016-07-05

116
Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

Cho, Byung Jin; Zang, H; Loh, WY; Ye, JD; Loh, TH; Lo, GQ, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18

117
Integration of Dual Metal Gate/High-K dielectric Stacks for Fermi-Level Pinning Free

Cho, Byung Jin, The 2nd International Workshop on Nanoscale Semiconductor Devices, pp.253 - 279, 2005-06-02

118
Integration of high-K gate dielectric into high mobility substrate

Cho, Byung Jin; Loh, WP; Zang, H; Dalapati, GK; Tong, Y; Choi, KJ, 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES SCIENCE AND TECHNOLOGY, pp.8 - 10, 2006-11-10

119
Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

Cho, Byung Jin; Wang, J; Loh, WY; Zang, H; Yu, MB; Chua, KT; Loh, TH, 4th International Conference on Group IV Photonics, pp.0 - 0, 2007-09-19

120
Integrity of gate oxides irradiated under electron-beam lithography conditions

Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08

121
Interfacial adhesion and diffusion barrier characteristics of synthesized graphene

Yoon, Taeshik; Cho, Byung Jin; Kim, Taek-Soo, 2014 The World Conference on Carbon, Carbon, 2014-07-03

122
Interpretation of rapid thermal diffusion of phosphorus into silicon

조병진; Kim, CK, Semiconductor Workshop for Young Engineers, pp.0 - 0, 1991-03-05

123
Investigation of process dependence of graphene growth on nickel thin film

Cho, Byung Jin; Mun, JH; Hwang, C; Lim, SK, 56th AVS symposium, 2009-11-09

124
Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application

Cho, Byung Jin; Hang, H; Ding, SJ; Zhu, C; Rustagi, RC; Lu, YF; Li, MF, International semiconductor device research symposium, pp.0 - 0, 2003-12-10

125
Investigation of quasi-breakdown mechanism in ultrathin gate oxides

Cho, Byung Jin; He, YD; Guan, H; Li, MF; Dong, Z, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., pp.0 - 0, 1999-11-29

126
Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate

Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Abstract Proc. of the Asia-Pacific SIA'98 Conf., pp.0 - 0, 1998-11-30

127
Investigation on Material Properties of Screen-printed Thermoelectric Thick films

Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-01

128
Issues on Metal Contact and Gate Electrode of Graphene Based FET

Cho, Byung Jin; Song, SM; Park, JK, The 4th International Conference on Recent Progress in Graphene Research (RPGR 2012), Institute of Physics (IOP), 2012-10

129
Low Cost and Flexible Non-Volatile Memory Using Oxidized Graphene and Analysis of Its Switching Mechanism

Hong, Seul Ki; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

130
LOW-COST THERMOELECTRIC POWER GENERATOR USING SCREEN PRINTING TECHNIQUE

Cho, Byung Jin; We, Ju Hyung; Kim, Sun Jin, 4th Molecular Materials Meeting (M3), Institute of Materials Research and Engineering, 2014-01-16

131
Material and electrical characterization of HfO2 films for MIM capacitors applications

Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22

132
Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

Huang, J.; Kirsch, P.D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.82 - 83, 2008-06-17

133
Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process

Cho, Byung Jin; Hwang, WS; Chan, DSH, IEEE 4th International Symposium on Advanced Gate Stack Technology, pp.0 - 0, 2007-09-10

134
Metal Electrode (Panel Presentation)

Cho, Byung Jin, Proceedings on 2nd International Symposium on Advanced Gate Stack Technology, pp.15 - 19, 2005-09-05

135
Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08

136
Metal-Germanium contacts with Graphene Interfacial Layer

서유진; 오중건; 김택용; 조병진; Lee, Seok-Hee, International Conference on Electronic Materials and Nanotechnlogy for Green Engvironment, Korean Institute of Metals and Materials, 2012-09-18

137
MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications

Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21

138
MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

139
Modeling of Thermal Conductivity Extraction of Thin Film Thermoelectric Materials Using a Screen Printing Technique

We, Ju Hyung; Kim, Sun Jin; Cho, Byung Jin, 6th Annual Energy Harvesting Workshop, 2011-08

140
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization

Cho, Byung Jin; Poon, D; Tan, LS; Bhat, M; See, A, IEEE 4th International Workshop on Junction Technology (IWJT-2004), pp.22 - 26, 2004-03-15

141
N-doped graphene aerogel loudspeaker

Kim, Choong Sun; Lee, Kyung Eun; Kim, Sang Ouk; Choi, Jung Woo; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

142
New breakdown mechanism of ultra thin gate oxides under ballistic transport

Cho, Byung Jin; Lee, SH; Joo, MS; Park, YJ; Kim, JC, 1st Korean Semiconductor Tech. Symp., pp.0 - 0, 1994-02-15

143
New reliability issues of CMOS transistors with 1.3 nm gate oxide

Cho, Byung Jin; Li, MF; Chen, G; Loh, WY; Kwong, DL, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp.0 - 0, 2003-04-28

144
New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz

Cho, Byung Jin; Chin, A; Mei, P; Zhu, C; Li, MF; Lee, S; Yoo, WJ, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, pp.0 - 0, 2003-11-13

145
Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application

Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03

146
Non-volatile Flexible ReRAM based on graphene oxide

조병진, IEEK Summer Conference 2010, IEEK Summer Conference 2010, 2010-06-16

147
Non-Volatile Memory Using Graphene Oxide for Flexible Electronics

Cho, Byung Jin, 10th International Conference on Nanotechnology (IEEE NANO 2010), IEEE, 2010-08-18

148
Novel oxynitridation technology for highly reliable thin dielectrics

Cho, Byung Jin; Joo, MS; Lee, SH; Lee, SK; KIm, JC; Choi, SH, Symp. on VLSI Tech., pp.107 - 107, 1995-06-07

149
Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application

Cho, Byung Jin; Zhang, G; Hwang, WS; Bobade, SM; Lee, SH; Yoo, WJ, International Electron Device Meeting (IEDM) 2007, pp.0 - 0, 2007-12-01

150
Optimization of Annealing Process of Screen Printed Sb2Te3 and Bi2Te3 Thick Films for Power Generator

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, ICT/ECT2012, Int'l Thermoelectrics Society, 2012-07-09

151
Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors

Shin, W.C.; Moon, H.; Yoo, S.; Cho, Byung Jin, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.936 - 939, IEEE, 2010-08-17

152
p+ n shallow junction formation from BN source using RTP

조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.77 - 77, 1987-05-12

153
Pentacene Thin-Film Transistors with PVP/HfLaO Hybrid Gate Dielectric for Low Voltage Operation

Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-08

154
Photoluminescene from silicon nanocrystals formed by pulsed laser deposition

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Song, WD; Hu, H, MRS Symposium, pp.13 - 13, 2003-04-22

155
Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11

156
Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Cho, Byung Jin; Guan, H; Li, MF; Zhang, Y; Jie, BB; Xie, J; Wang, JLF, 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp.20 - 20, 1999-10-15

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