Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380
Showing results 80 to 139 of 214
| GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy Cho, Byung Jin; Oh, HJ; Choi, KJ; Loh, WY; Htoo, T; Chua, SJ, Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices Cho, Byung Jin; Pu, J; Kim, SJ; Kim, YS, Material Research Society 2008 Spring Meeting, 2008-03-25 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| Germanium MOS capacitors with ultra thin HfO2 gate dielectric Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
| Graphene based Resistive Mixer for Flexible RF Applications Oh, Joong Gun; Seong, Hyejeong; Kim, Choong Sun; Im, Sung Gap; Cho, Byung Jin, 7th International Conference on Recent Progress in Graphene & Two-Dimensional Materials Research, Monash Centre for Atomically Thin Materials, 2015-10-27 |
| Graphene Field Effect Transistors with Ultrathin Fluoropolymer/SiO2 Hybrid Gate Dielectric Shin, Woo Cheol; Cho, Byung Jin, The 9th International Nanotech Symposium & Exhibition with NANO KOREA 2011, 2011-08 |
| Graphene for Electronic Devices 조병진, 한국공업화학회, 2012-03 |
| Graphene for Future Electronic Devices Cho, Byung Jin, The 9th Korea-US NanoForum, 2012-06 |
| Graphene for MOS devices 조병진, 2012 한국재료학회 제 22 회 신소재 심포지엄, 2012-05 |
| Graphene for RF and 3D IC Applications 조병진; 홍슬기; 송승민, 13th RF Integrated Circuit Technology Workshop, 대한전자공학회 RF집적회로기술연구회, 2013-09-26 |
| Graphene Gate Electrode for Advanced Silicon-Based CMOS Devices Park, Jong Kyung; Song, Seung Min; Mun, Jeong Hun; Cho, Byung Jin, Graphene Week 2012, 2011-06 |
| Graphene oxide based flexible ReRAM and its switching mechanism 홍슬기; 조병진, The Polymer Society of Korea - Society's Spring Meeting, 2011-04 |
| Graphene oxide based flexible ReRAM and its switching mechanism Hong, SK; Choi, SY; Cho, Byung Jin, Dasan Conference - Graphene Science and Technology, pp.80 - 81, KOSFT, 2010-11 |
| Graphene Thermo-acoustic Resonator for Boosting Sound Pressure Level in Low Frequency Region 신의중; 김충선; 김동환; 최정우; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-14 |
| Graphene towards electronic device and systems 조병진; 홍슬기; 문정훈; 신우철, Nano Korea 2013, Graphene symposium 2013, 미래창조과학부, 2013-07-11 |
| Growth and characterization of hafnium oxide thin films prepared by MOCVD Cho, Byung Jin; Fong, CS; Wei, VLS; Krishnam, RG; Trigg, A; Bera, LK; Mathew, S, 2003 International conference on Characterisation and Metrology for ULSI technology, pp.176 - 180, 2003-03-24 |
| Growth of monolayer graphene with minimized wrinkles using rGO interfacial layer Mun, Jeong Hun; Bong, Jae Hoon; Oh, Joong Gun; Cho, Byung Jin, Carbon 2014, Korean Carbon Society, 2014-06-30 |
| Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies Cho, Byung Jin; Kim, SJ; Li, MF; Yu, MB, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
| HfLaO 절연막을 이용한 그래핀 전계효과 트랜지스터의 Dirac 전압 조율 오중건; 신윤상; 신우철; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05 |
| HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10 |
| High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14 |
| High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node Cho, Byung Jin; Suthram, S; Majhi, P; Sun, G; Kalra, P; Harris, HR; Choi, KJ, International Electron Devices Meeting, pp.727 - 730, 2007 |
| High performance RF MOSFETs and passive devices on Si Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
| High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics 오중건; 박관용; 김충선; 임성갑; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-15 |
| High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack Cho, Byung Jin; Yang, WF; Lee, SJ; Whang, SJ; Lim, SY; Kwong, DL, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18 |
| High-K Dielectrics for Charge Trap - type Flash Memory Application Cho, Byung Jin; He, W; Pu, J, 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, pp.37 - 41, 2008-07-09 |
| High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Sig, JM; Hau, NT, International Electron Device Meeting (IEDM), December 2004, pp.889 - 892, 2004-12-13 |
| High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications Cho, Byung Jin; Hu, H; Ding, SJ; Lim, HF; Zhu, C; Li, MF; Kim, SJ, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices Cho, Byung Jin, 2007 MRS Spring Meeting, pp.0 - 0, MRS, 2007-04-09 |
| Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices Cho, Byung Jin; Zang, H; Loh, WY; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| Improvement in Contact Resistance of Screen-printed Bi2Te2.7Se0.3 Thick Films by Annealing in a Reduction Ambient Kim, Yongjun; Kim, Sun Jin; Choi, Hyeongdo; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-02 |
| Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device 조병진, 17th Korean Conference on Semiconductors, 17th Korean Conference on Semiconductors, 2010-02-25 |
| Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping Cho, Byung Jin; Shen, C; Pu, J; Li, MF, IEEE 2nd International conference on memory technology and design, pp.99 - 101, 2007-03-07 |
| Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device Cho, Byung Jin, 2010 International Conference on Solid State Devices and Materials, SSDM 2010, 2010-09-23 |
| Inorganic-based High-Performance Flexible Thermoelectric Power Generator for Wearable Electronics Application Cho, Byung Jin; Kim, Sun Jin; We, Ju Hyung; Choi, Hyeongdo; Kim, Yongjun; Shin, Ji Sun, The 18th International Symposium on the Physics of Semiconductors and Applications, Semiconductor Physics Division of the Korean Physical Society, 2016-07-05 |
| Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon Cho, Byung Jin; Zang, H; Loh, WY; Ye, JD; Loh, TH; Lo, GQ, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18 |
| Integration of Dual Metal Gate/High-K dielectric Stacks for Fermi-Level Pinning Free Cho, Byung Jin, The 2nd International Workshop on Nanoscale Semiconductor Devices, pp.253 - 279, 2005-06-02 |
| Integration of high-K gate dielectric into high mobility substrate Cho, Byung Jin; Loh, WP; Zang, H; Dalapati, GK; Tong, Y; Choi, KJ, 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES SCIENCE AND TECHNOLOGY, pp.8 - 10, 2006-11-10 |
| Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform Cho, Byung Jin; Wang, J; Loh, WY; Zang, H; Yu, MB; Chua, KT; Loh, TH, 4th International Conference on Group IV Photonics, pp.0 - 0, 2007-09-19 |
| Integrity of gate oxides irradiated under electron-beam lithography conditions Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08 |
| Interfacial adhesion and diffusion barrier characteristics of synthesized graphene Yoon, Taeshik; Cho, Byung Jin; Kim, Taek-Soo, 2014 The World Conference on Carbon, Carbon, 2014-07-03 |
| Interpretation of rapid thermal diffusion of phosphorus into silicon 조병진; Kim, CK, Semiconductor Workshop for Young Engineers, pp.0 - 0, 1991-03-05 |
| Investigation of process dependence of graphene growth on nickel thin film Cho, Byung Jin; Mun, JH; Hwang, C; Lim, SK, 56th AVS symposium, 2009-11-09 |
| Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application Cho, Byung Jin; Hang, H; Ding, SJ; Zhu, C; Rustagi, RC; Lu, YF; Li, MF, International semiconductor device research symposium, pp.0 - 0, 2003-12-10 |
| Investigation of quasi-breakdown mechanism in ultrathin gate oxides Cho, Byung Jin; He, YD; Guan, H; Li, MF; Dong, Z, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., pp.0 - 0, 1999-11-29 |
| Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Abstract Proc. of the Asia-Pacific SIA'98 Conf., pp.0 - 0, 1998-11-30 |
| Investigation on Material Properties of Screen-printed Thermoelectric Thick films Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K.; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-01 |
| Issues on Metal Contact and Gate Electrode of Graphene Based FET Cho, Byung Jin; Song, SM; Park, JK, The 4th International Conference on Recent Progress in Graphene Research (RPGR 2012), Institute of Physics (IOP), 2012-10 |
| Low Cost and Flexible Non-Volatile Memory Using Oxidized Graphene and Analysis of Its Switching Mechanism Hong, Seul Ki; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05 |
| LOW-COST THERMOELECTRIC POWER GENERATOR USING SCREEN PRINTING TECHNIQUE Cho, Byung Jin; We, Ju Hyung; Kim, Sun Jin, 4th Molecular Materials Meeting (M3), Institute of Materials Research and Engineering, 2014-01-16 |
| Material and electrical characterization of HfO2 films for MIM capacitors applications Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22 |
| Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT Huang, J.; Kirsch, P.D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.82 - 83, 2008-06-17 |
| Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process Cho, Byung Jin; Hwang, WS; Chan, DSH, IEEE 4th International Symposium on Advanced Gate Stack Technology, pp.0 - 0, 2007-09-10 |
| Metal Electrode (Panel Presentation) Cho, Byung Jin, Proceedings on 2nd International Symposium on Advanced Gate Stack Technology, pp.15 - 19, 2005-09-05 |
| Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08 |
| Metal-Germanium contacts with Graphene Interfacial Layer 서유진; 오중건; 김택용; 조병진; Lee, Seok-Hee, International Conference on Electronic Materials and Nanotechnlogy for Green Engvironment, Korean Institute of Metals and Materials, 2012-09-18 |
| MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21 |
| MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| Modeling of Thermal Conductivity Extraction of Thin Film Thermoelectric Materials Using a Screen Printing Technique We, Ju Hyung; Kim, Sun Jin; Cho, Byung Jin, 6th Annual Energy Harvesting Workshop, 2011-08 |
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