Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1151

Showing results 72 to 98 of 98

72
Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11

73
Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

Rieh, J. S.; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, Kyounghoon; Katehi, L. P. B.; Bhattacharya, P.; et al, IEEE Cornell Conf, pp.322 - 331, IEEE, 1997-08-04

74
New High-Sensitivity Logarithmic Response CMOS Active Pixel Sensor using a GIDL Mechanism

백인규; 이지원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02

75
Noise Analysis and Modeling of Microwave AlGaN/GaN HEMTs Considering Trap Effects

Hwang, M; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.136 - 139, 2005

76
Novel Differential-Mode RTD/HBT MOBILE-based D-Flip Flop IC

Jeong,Y; Kim, T; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.222 - 223, 2005

77
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach

Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01

78
Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs

Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.122 - 123, 2003-09-16

79
On the functional failure and switching time analysis of the MOBILE circuit

Li, S. R.; Mazumder, P.; Yang, Kyounghoon, IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005, pp.2531 - 2534, IEEE, 2005-05-23

80
Passivation Study for AlGaN/GaN HEMTs Using Photosensitive BCB and SiN

Kim, S; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.307 - 310, 2005

81
Performance modeling of resonant tunneling based RAMS

Zhang, H.; Mazumder, P.; Ding, L.; Yang, Kyounghoon, 2003 IEEE International Symposium on Circuits and Systems, v.4, pp.900 - 903, IEEE, 2003-05-25

82
Performance of OFDM systems with adaptive nonlinear amplifiers

Jong, J. H.; Yang, Kyounghoon; Stark,W. E.; Haddad, G. I., 1999 IEEE Military Communications Conference, pp.1110 - 1114, IEEE, 1999-10-31

83
Power optimization of OFDM systems with DC bias controlled nonlinear amplifiers

Jong, J. H.; Yang, Kyounghoon; Stark, W.E.; Haddad G.I., IEEE VTS 50th Vehicular Technology Conference, VTC 1999-Fall, v.50, no.1, pp.268 - 272, IEEE, 1999-09-19

84
Practical Application of Quantum-effect Device Technology

Yang, Kyounghoon, Nanotech Symposium & Exhibition in Korea, 2008

85
Quantum-Effect RTD-Based Microwave Amplifier for ISM-band Low-Power Applications

Lee, Jong Won; Lee, Jooseok; Kim, Maengkyu; Yang, Kyounghoon, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-22

86
Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design

Song, Y.; Yang, Kyounghoon, 14th Indium Phosphide and Related Materials Conference, pp.165 - 168, IEEE, 2002-05-12

87
Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress

Kim, D; Yoon, M; Kim, T; Yang, Kyounghoon, IEEE, International Symposium on Compound Semiconductors, pp.231 - 232, IEEE, 2003

88
Reset Level Boosting in Self-Adaptive APS for Wide Output Voltage Swing at Low Voltage Operation

Lee, J; Cho, C; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.280 - 281, 2008

89
Reset level Boosting in Self-adaptive CMOS Active Pixel Sensor for a Wide Output Voltage Swing at Low Voltage Operation

Lee, J; Cho, Ch; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.54 - 55, 2009

90
Resonant tunneling diode based QMOS edge triggered flip-flop design

Zhang, H.; Mazumder, P.; Yang, Kyounghoon, 2004 IEEE International Symposium on Cirquits and Systems - Proceedings, v.3, pp.705 - 708, IEEE, 2004-05-23

91
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers

Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05

92
Suppression of Random Offset Deviation in a Rail-to-Rail Buffer Amplifier for Display Driver ICs Under Transistor Threshold Mismatch

Song,Y; 양경훈, Korean Conference on Semiconductors, pp.77 - 78, 2006

93
The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors

J. C. Cowles,; Yang, Kyounghoon; A. Guiterrez-Aitken; Munns, G. O.; Chen, W. L.; Haddad, G. I.; Bhattacharya, P. K., Int. Semicond. Device Research Symp., pp.787 - 790, 1993

94
Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications

Yang, J.G.; Choi, S.; Jeong, Y.; Yang, Kyounghoon, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, pp.133 - 136, 2007-05-14

95
Theoretical and experimental study on thermal characteristics of InP/InGaAs single heterojunction bipolar transistors

Kim, Taeho; Song,Y; Park, HM; Kim, M; Hong, Songcheol; Yang, Kyounghoon, 2001 Int. Conf. On Solid State Devices and Materials, pp.70 - 71, 2001

96
Wireless RF Emission of Low-power Quantum Tunneling-diode Wave Generator Integrated with a microstructure Antenna

Kim, Maengkyu; Lee, Jooseok; Baek, Inkyu; Lee, Jongwon; Park, Jaehong; Yang, Kyounghoon, The 11th Nano Korea 2012, Nano Korea, 2012-08

97
다층구조의 마이크로스트립 라인을 이용한 새로운 저 면적 3차원 하이브리드 커플러

양정길; 정용식; 최선규; 양경훈, 2006 Fall Conference, Korea Institute of Military Science & Technology, pp.158 - 161, 2006

98
새로운 Inner Field-plate 구조를 이용한 고전력 AlGaN/GaN HEMTs의 향상된 DC와 RF 성능

이기원; 고광의; 이성식; 양경훈, 2006, Fall Conference, Korea Institute of Military Science & Technology, pp.155 - 157, 2006

Discover

Type

. next

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0