Browse "School of Electrical Engineering(전기및전자공학부)" by Author Zhu, CX
Showing results 1 to 16 of 16
| A high performance MIM capacitor using HfO(2) dielectrics Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jin; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09 |
| A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02 |
| Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03 |
| Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications Zhu, CX; Cho, Byung Jin; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03 |
| Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05 |
| Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10 |
| High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12 |
| Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric Kim, SJ; Cho, Byung Jin; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08 |
| Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11 |
| Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09 |
| MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02 |
| Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jin; et al, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07 |
| RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
| Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jin; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10 |
| Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics Cho, Byung Jin; Huang, CH; Yang, MY; Chin, A; Chen, WJ; Zhu, CX; Li, MF, Symposium on VLSI Technology, pp.119 - 119, 2003-06-11 |
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