Browse "School of Electrical Engineering(전기및전자공학부)" by Author Zhu, C
Showing results 1 to 17 of 17
| A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics Cho, Byung Jin; Ding, SJ; Hu, H; Zhu, C; Kim, SJ; Li, MF; Chin, A; et al, Conference on Solid State and Integrated Circuit Technology (ICSICT), pp.0 - 0, 2004-10-18 |
| ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11 |
| Effects of Cu diffusion on MOSFET electrical properties Cho, Byung Jin; Zhu, C; Yoo, WJ; Tan, DPP; Lim, SY, 18th International VLSI Multilevel Interconnection Conf. (VMIC), pp.0 - 0, 2001-11-28 |
| Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11 |
| Electrical Properties of CMOS Devices with Cu Local Interconnects Cho, Byung Jin; Xie, H; Yoo, WJ; Zhu, C; Lim, SY; Tan, D; Lai, D, 8th International Conference on Dielectrics & Conductors for ULSI Multilevel Interconnection (DCMIC), pp.0 - 0, 2002-02-25 |
| Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs Cho, Byung Jin; Kim, SJ; Li, MF; Ding, SJ; Yu, MB; Zhu, C; Chin, A; et al, Symposium on VLSI Technology, pp.218 - 219, 2004-06-17 |
| Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs Cho, Byung Jin; Huang, CH; Yu, DS; Chin, A; Chen, WJ; Zhu, C; Li, MF, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10 |
| High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14 |
| High performance RF MOSFETs and passive devices on Si Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
| High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications Cho, Byung Jin; Hu, H; Ding, SJ; Lim, HF; Zhu, C; Li, MF; Kim, SJ, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application Cho, Byung Jin; Hang, H; Ding, SJ; Zhu, C; Rustagi, RC; Lu, YF; Li, MF, International semiconductor device research symposium, pp.0 - 0, 2003-12-10 |
| Material and electrical characterization of HfO2 films for MIM capacitors applications Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22 |
| MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21 |
| New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz Cho, Byung Jin; Chin, A; Mei, P; Zhu, C; Li, MF; Lee, S; Yoo, WJ, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, pp.0 - 0, 2003-11-13 |
| Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03 |
| Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction Cho, Byung Jin; Zhu, C; Hu, H; Yang, XF; Kim, SJ; Chin, A, International Electron Device Meeting (IEDM), pp.0 - 0, IEEE International Electron Devices, 2003-12-08 |
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