Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorYue, JMP

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Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure

Cho, Byung Jinresearcher; Yue, JMP; Chim, WK; Qin, WH; Chan, DSH; Kim, YB; Jang, SA, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.94 - 94, 1999-07-05

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

Yue, JMP; Chim, WK; Cho, Byung Jinresearcher; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; et al, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03

Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Chim, WK; Cho, Byung Jinresearcher; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01



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