Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yu, Hyun-Young
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| Ge 기반의 소자에서 Y-ZrO2 게이트 유전체를 이용한 EOT 스케일링(~5.7 A) 및 누설 전류와 계면 트랩의 감소 Lee, Tae In; Kim, Min Ju; Manh-Cuong Nguyen; Ahn, Hyunjun; Moon, Jung Min; Lee, Tae Yoon; Yu, Hyun-Young; et al, 제25회 한국반도체학술대회, 서강대학교, 2018-02-07 |
| H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09 |
| Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04 |
| Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
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