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Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; Kumar, Ulayil Sajesh; Shin, Changhwan; Ahn, Minho; Jeon, Sanghun, NANOTECHNOLOGY, v.30, no.50, 2019-10 |
Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07 |
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