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Browse "School of Electrical Engineering(전기및전자공학부)" by Author Myong, S.Y.

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Showing results 1 to 8 of 8

1	Alternative molecular semiconductors for sensitizing nanocrystalline solar cells Chevaleevski, O.; Larina, L.; Myong, S.Y.; Tsvetkov, A.; Lim, Koeng Su, 29th IEEE Photovoltaic Specialists Conference, pp.1318 - 1321, 2002-05-19
2	Fast and highly stabilized protocrystalline silicon multilayer solar cell Myong, S.Y.; Konagai, M.; Lim, Koeng Su, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, pp.1737 - 1740, 2003-05-11
3	Good stability of protocrystalline silicon multilayer solar cells against light irradiation originating from vertically regular distribution of isolated nano-sized silicon grains Myong, S.Y.; Kwon, S.W.; Kwak, J.H.; Lim, Koeng Su; Pearce, J.M.; Konagai, M., 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, pp.1584 - 1587, 2006-05-07
4	Highly and rapidly stabilized protocrystalline silicon multilayer solar cells Lim, Koeng Su; Kwak, J.H.; Kwon, S.W.; Myong, S.Y., 2005 Materials Research Society Spring Meeting, v.862, pp.561 - 572, 2005-03-28
5	Intentional hydrogen doping of polycrystalline ZnO thin films prepared by MOCVD technique Myong, S.Y.; Lim, Koeng Su, 31st IEEE Photovoltaic Specialists Conference - 2005, pp.148 - 151, 2005-01-03
6	Light-soaking behaviors of the protocrystalline silicon multilayer: Origin of the rapid stabilized and annealing behavior Kwon, S.W.; Kwak, J.; Park, S.I.; Myong, S.Y.; Lim, Koeng Su, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, pp.1704 - 1707, 2006-05-07
7	Optimization of P-A-SiC:H/P-NC-SiC:H double layer structure for a high efficiency A-Si:H based solar cell Myong, S.Y.; Kim, S.S.; Chevaleevski, O.; Jun, K.H.; Konagai, M.; Lim, Koeng Su, 29th IEEE Photovoltaic Specialists Conference, pp.1226 - 1229, 2002-05-19
8	Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique Myong, S.Y.; Lim, Koeng Su, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.195 - 196, 2004-07-26

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