Showing results 1 to 13 of 13
A comparative study of radiation- and stress-induced leakage currents in thin gate oxides Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.15, no.10, pp.961 - 964, 2000-10 |
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292, 2000-07 |
A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide Cho, Byung Jin; Ang, CH; Ling, CH; Cheng, ZY, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.254 - 254, 2000-08-28 |
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12 |
Does short wavelength lithography process degrade the integrity of thin gate oxide? Kim, SJ; Cho, Byung Jin; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; et al, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000-10 |
Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876, 2000-09 |
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05 |
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11 |
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759, 2000-07 |
Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09 |
Reliability of thin gate oxides irradiated under X-ray lithography conditions Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04 |
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