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A low-power highly linear cascoded multiple-gated transistor CMOS RF amplifier with 10 dB IP3 improvement (vol 13, pg 205, 2003) Nam, I; Ko, B; Lee, Kwyro; Kim, TW; Kim, B, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, pp.420 - 422, 2003-09 |
An experimental coin-sized radio for extremely low-power WPAN (IEEE 802.15.4) application at 2.4 GHz Choi, P; Park, HC; Kim, S; Park, S; Nam, I; Kim, TW; Shin, S; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.38, pp.2258 - 2268, 2003-12 |
Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors Kim, TW; Kim, B; Lee, Kwyro, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.39, pp.223 - 229, 2004-01 |
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