Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorHa, D

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Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs

Choi, Yang-Kyuresearcher; Ha, D; King, TJ; Bokor, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2073 - 2076, 2003-04

Low-frequency noise characteristics in p-channel FinFETs

Lee, JS; Choi, Yang-Kyuresearcher; Ha, D; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.722 - 724, 2002-12

Metal gate technology for fully depleted SOI CMOS

Choi, Yang-Kyuresearcher; Ranade, P; Ha, D; Takeuchi, H; King, TJ, 4th International AVS Conference on Microelectronics and Interfaces(ICMI 03), AVS, 2003-03

Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

Ha, D; Takeuchi, H; Choi, Yang-Kyuresearcher; King, TJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.12, pp.1989 - 1996, 2004-12



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