Browse "School of Electrical Engineering(전기및전자공학부)" by Author Gaddam, Venkateswarlu
Showing results 1 to 16 of 16
| A method of controlling the imprint effect in hafnia ferroelectric device Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; Jeong, Yeongseok; Kim, Giuk; Qin, Yixin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01 |
| A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun, NANO CONVERGENCE, v.9, no.1, pp.1 - 18, 2022-10 |
| Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01 |
| Effect of Ga composition on mobility in a-InGaZnO thin-film transistors Ahn, Minho; Gaddam, Venkateswarlu; Park, Sungho; Jeon, Sanghun, NANOTECHNOLOGY, v.32, no.9, 2021-02 |
| Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06 |
| Effect of High Pressure Annealing Temperature on the Ferroelectric Properties of TiN/Hf0.25Zr0.75O2/TiN Capacitors Jeon, Sanghun; Das, Dipjyoti; Gaddam, Venkateswarlu, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020, IEEE, 2020-03 |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06 |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), IEEE, 2020-03 |
| Ferroelectricity in Al2O3/Hf0.5Zr0.5O2 Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.1, pp.62 - 67, 2021-02 |
| High Pressure Microwave Annealing Effect on Electrical Properties of Hf (x) Zr1-x O Films near Morphotropic Phase Boundary Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; Kim, Giuk; Shin, Hunbeom; Gaddam, Venkateswarlu; Jeon, Sanghun, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.9, pp.4826 - 4835, 2023-08 |
| Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 |
| Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03 |
| Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02 |
| Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
| Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
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