Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorGaddam, Venkateswarlu

Showing results 1 to 6 of 6

1
Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films

Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01

2
Effect of Ga composition on mobility in a-InGaZnO thin-film transistors

Ahn, Minho; Gaddam, Venkateswarlu; Park, Sungho; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.32, no.9, 2021-02

3
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process

Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06

4
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors

Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04

5
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors

Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03

6
Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02

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