Browse "School of Electrical Engineering(전기및전자공학부)" by Author FURUKAWA, S
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| A NOVEL ELECTRON-BEAM EXPOSURE EPITAXY FOR GROWING GAAS FILMS ON FLUORIDE SI STRUCTURES Lee, Hee Chul; ISHIWARA, H; KANEMARU, S; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.26, no.11, pp.1834 - 1836, 1987-11 |
| DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES Lee, Hee Chul; ISHIWARA, H; FURUKAWA, S; SAIKI, K; KOMA, A, APPLIED SURFACE SCIENCE, v.41-2, pp.553 - 558, 1989-11 |
| ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES Lee, Hee Chul; ASANO, T; ISHIWARA, H; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.27, no.9, pp.1616 - 1625, 1988-09 |
| FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS ASANO, T; ISHIWARA, H; Lee, Hee Chul; TSUTSUI, K; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141, 1986-02 |
| OPTIMIZATION OF THE GROWTH-CONDITIONS OF HETEROEPITAXIAL GAAS FILMS ON CAF2/SI STRUCTURES Lee, Hee Chul; ASANO, T; ISHIWARA, H; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.7, pp.595 - 597, 1986-07 |
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