Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorEast, J. R.

Showing results 1 to 7 of 7

1
A Ring oscillator using an RTD-HBT heterostructure

Lin, C. H.; Yang, Kyounghoonresearcher; East, J. R.; Haddad, G. I.; Chow, D.H.; Warren, L. D.; Dunlap, H. L.; et al, Int. Conf. On Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), pp.120 - 121, 2000

2
Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications

Yang, Kyounghoonresearcher; East, J. R.; Haddad, G. I., Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113 - 118, 1998-09

3
Fabrication and characterization of RTD-HBT inverter

Lin, C. H.; Yang, Kyounghoonresearcher; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07

4
InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Yang, Kyounghoonresearcher; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04

5
InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoonresearcher; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16

6
Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoonresearcher; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11

7
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach

Yang, Kyounghoonresearcher; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01

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