Browse "School of Electrical Engineering(전기및전자공학부)" by Author Du, AY
Showing results 1 to 4 of 4
| Dopant loss mechanism in n(+)/p germanium junctions during rapid thermal annealing Poon, CH; Tan, LS; Cho, Byung Jin; Du, AY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.12, pp.895 - 899, 2005-10 |
| Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05 |
| Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10 |
| Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET Cho, Byung Jin; Poon, D; Tan, LS; Du, AY; Chan, L, 3rd International Conference on Materials for Advanced Technologies, pp.5 - 5, 2005-07-03 |
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