Browse "School of Electrical Engineering(전기및전자공학부)" by Author Das, Dipjyoti
Showing results 1 to 14 of 14
| Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode Das, Dipjyoti; Park, Junghak; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.31, no.3, 2020-01 |
| Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01 |
| Effect of High Pressure Annealing Temperature on the Ferroelectric Properties of TiN/Hf0.25Zr0.75O2/TiN Capacitors Jeon, Sanghun; Das, Dipjyoti; Gaddam, Venkateswarlu, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020, IEEE, 2020-03 |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06 |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), IEEE, 2020-03 |
| Ferroelectricity in Al2O3/Hf0.5Zr0.5O2 Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.1, pp.62 - 67, 2021-02 |
| High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06 |
Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode Park, Junghak; Das, Dipjyoti; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANO CONVERGENCE, v.6, no.1, 2019-12 |
| Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 |
| Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03 |
| Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02 |
| Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation Joh, Hyunjin; Anoop, Gopinathan; Lee, Won-June; Das, Dipjyoti; Lee, Jun Young; Kim, Tae Yeon; Kim, Hoon; et al, ACS APPLIED ELECTRONIC MATERIALS, v.3, no.3, pp.1244 - 1251, 2021-03 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
| The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02 |
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