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Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei-Yip; Mun, Hoe Keat; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837, 2007-08 |
Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei Yip; Mun, Hoe Keat; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.90, no.18, 2007-04 |
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