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Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method Shin, Yunsang; Chung, Wonil; Seo, Yujin; Lee, Choong-Ho; Sohn, Dong Kyun; Cho, Byung Jin, 2014 Symposium on VLSI Technology, VLSI Symposium, 2014-06-11 |
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