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Browse "School of Electrical Engineering(전기및전자공학부)" by Author Bera, LK

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Showing results 1 to 9 of 9

1	Channel mobility behaviour in high-K/metal gate NMOSFETs Cho, Byung Jin; Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS, 2nd International Conference on Materials for Advanced Technologies, pp.516 - 516, 2003-12-11
2	Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09
3	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10
4	Germanium MOS capacitors with ultra thin HfO2 gate dielectric Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11
5	Growth and characterization of hafnium oxide thin films prepared by MOCVD Cho, Byung Jin; Fong, CS; Wei, VLS; Krishnam, RG; Trigg, A; Bera, LK; Mathew, S, 2003 International conference on Characterisation and Metrology for ULSI technology, pp.176 - 180, 2003-03-24
6	Improvement of electrical properties of MOCVD HfO2 by multistep deposition Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11
7	Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19
8	MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19
9	Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

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