Showing results 1 to 13 of 13
CALCULATIONS OF THE ELECTRIC-FIELD DEPENDENT FAR-INFRARED ABSORPTION-SPECTRA IN INAS/ALGASB QUANTUM WELLS Hong, Songcheol; LOEHR, JP; OH, JE; BHATTACHARYA, PK; SINGH, J, APPLIED PHYSICS LETTERS, v.55, no.9, pp.888 - 890, 1989-08 |
ENHANCEMENT IN EXCITONIC ABSORPTION DUE TO OVERLAP IN HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN GAAS/INALGAAS QUANTUM-WELL STRUCTURES G. P. Kothiyal; Hong, Songcheol; DEBBAR, N; BHATTACHARYA, PK; J. Singh, APPLIED PHYSICS LETTERS, v.51, no.14, pp.1091 - 1093, 1987-10 |
FAR-INFRARED ABSORPTION-SPECTRA MEASURED IN INAS/AL0.36GA0.64SB QUANTUM-WELLS Kim, Joungho; BHATTACHARYA, PK; SINGH, J; GULARI, E, APPLIED PHYSICS LETTERS, v.56, no.19, pp.1901 - 1902, 1990-05 |
HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH ER-DOPED GAAS SETHI, S; BROCK, T; BHATTACHARYA, PK; Kim, Joungho; WILLIAMSON, S; CRAIG, D; NEES, J, IEEE ELECTRON DEVICE LETTERS, v.16, no.3, pp.106 - 108, 1995-03 |
INTEGRATED MULTI-QUANTUM-WELL CONTROLLER-MODULATOR WITH HIGH-GAIN FOR LOW-POWER PHOTONIC SWITCHING LI, WQ; Hong, Songcheol; OH, JE; SINGH, J; BHATTACHARYA, PK, ELECTRONICS LETTERS, v.25, no.7, pp.476 - 477, 1989-03 |
INTERDIFFUSION AND WAVELENGTH MODIFICATION IN IN0.53GA0.47AS/IN0.52AL0.48AS QUANTUM-WELLS BY LAMP ANNEALING SEO, KS; BHATTACHARYA, PK; KOTHIYAL, GP; Hong, Songcheol, APPLIED PHYSICS LETTERS, v.49, no.15, pp.966 - 968, 1986-10 |
INTERSUBBAND ABSORPTION IN STRAINED INXGA1-XAS/AL0.4GA0.6AS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.15) MULTIQUANTUM WELLS ZHOU, X; BHATTACHARYA, PK; HUGO, G; Hong, Songcheol, APPLIED PHYSICS LETTERS, v.54, no.9, pp.855 - 856, 1989-02 |
LOW-POWER EXCITON-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR THRESHOLDING LOGIC APPLICATIONS GOSWAMI, S; Hong, Songcheol; BISWAS, D; BHATTACHARYA, PK; SINGH, J; LI, WQ, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.27, no.3, pp.760 - 768, 1991-03 |
NEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR GOSWAMI, S; DAVIS, L; Hong, Songcheol; SINGH, J; BHATTACHARYA, PK; HADDAD, GI, ELECTRONICS LETTERS, v.28, no.10, pp.915 - 916, 1992-05 |
QUANTUM CONFINED STARK-EFFECT OF EXCITONIC TRANSITIONS IN GAAS ALGAAS MQW STRUCTURES FOR IMPLEMENTATION OF NEURAL NETWORKS - BASIC DEVICE REQUIREMENTS SINGH, J; Hong, Songcheol; BHATTACHARYA, PK; SAHAI, R, APPLIED OPTICS, v.27, no.21, pp.4554 - 4561, 1988-11 |
STARK-EFFECT IN GAAS-ALXGA1-X AS QUANTUM-WELLS - LIGHT-SCATTERING BY INTERSUBBAND TRANSITIONS BAJEMA, K; MERLIN, R; JUANG, FY; Hong, Songcheol; SINGH, J; BHATTACHARYA, PK, PHYSICAL REVIEW B, v.36, no.2, pp.1300 - 1302, 1987-07 |
STARK-EFFECT IN QUANTUM WELLS - RAMAN-SCATTERING BY INTERSUBBAND TRANSITIONS BAJEMA, K; MERLIN, R; JUANG, FY; Hong, Songcheol; SINGH, J; BHATTACHARYA, PK, JOURNAL DE PHYSIQUE, v.48, no.C-5, pp.179 - 182, 1987-11 |
SYSTEM REQUIREMENTS AND FEASIBILITY STUDIES FOR OPTICAL MODULATORS BASED ON GAAS/ALGAAS MULTIQUANTUM WELL STRUCTURES FOR OPTICAL-PROCESSING SINGH, J; Hong, Songcheol; BHATTACHARYA, PK; SAHAI, R; LASTUFKA, C; SOBEL, HR, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.6, no.6, pp.818 - 831, 1988-06 |
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