Showing results 1 to 5 of 5
Atomic layer deposition of nickel and nickel germanide for next generation 3D devices = 차세대 3D 반도체 소자 적용을 위한 니켈의 원자층 증착 방법 공정 개발 및 니켈-저마나이드 형성link Ahn, Hyun Jun; Cho, Byung Jin; et al, 한국과학기술원, 2020 |
Selective Pore-Sealing of Highly Porous Ultralow-k dielectrics for ULSI Interconnects by Cyclic Initiated Chemical Vapor Deposition Process Yoon, Seong Jun; Pak, Kwanyong; Ahn, Hyun Jun; Yoon, Alexander; Im, Sung Gap; Cho, Byung Jin, 38th IEEE Symposium on VLSI Technology, pp.73 - 74, IEEE, 2018-06 |
Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition Kim, Choong-Ki; Ahn, Hyun Jun; Moon, Jung Min; Lee, Sukwon; Moon, Dong-Ii; Park, Jeong Soo; Cho, Byung-Jin; et al, SOLID-STATE ELECTRONICS, v.114, pp.90 - 93, 2015-12 |
The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition Moon, Jung Min; Ahn, Hyun Jun; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Rho, Il Cheol; Kim, Choon Hwan; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.4, pp.1423 - 1427, 2016-04 |
Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics Ahn, Hyun Jun; Moon, Jungmin; Koh, Sungho; Seo, Yujin; Kim, Choong-Ki; Rho, Il Cheol; Kim, Choon Hwan; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.7, pp.2858 - 2863, 2016-07 |
Discover