Browse "School of Electrical Engineering(전기및전자공학부)" byAuthorAhn, Dae-Chul

Showing results 1 to 15 of 15

1
A Vertically Integrated Junctionless Nanowire Transistor

Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; et al, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03

2
An Optimum Strategy for the Low Voltage Operation of the Mechanical Switch

Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Ahn, Dae-Chul; Lee, Dong-Il; Bae, Hagyoul; Choi, Yang-Kyuresearcher, IEEE NANO 2015, IEEE, 2015-07-29

3
Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Hur, Jae; Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Bang, Tewook; Jeon, Seung-Bae; Choi, Yang-Kyuresearcher, IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544, 2016-05

4
Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory

Kim, Myung-Su; Ahn, Dae-Chul; Park, Jun-Young; Seo, Myungsoo; Kim, Seong-Yeon; Kim, Wu-Kang; Yun, Dae-Hwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199, 2019-02

5
First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels

Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jin-Su; Choi, Bong-Sik; Park, Jun-Young; Ahn, Dae-Chul; Kim, Choong-Ki; et al, International Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), 2016-12-05

6
Impact of crystalline damage on a vertically integrated junctionless nanowire transistor

Ahn, Dae-Chul; Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Bang, Tewook; Choi, Yang-Kyuresearcher, APPLIED PHYSICS LETTERS, v.109, no.18, 2016-10

7
Improved Split C-V Technique for Accurate Extraction of Mobility by Considering Effective Inversion Charges in p-Channel Si0.8Ge0.2 MOSFET

Bang, Te-Wook; Bae, Hagyoul; Kim, Choong-Ki; Hur, Jae; Park, Jun-Young; Ahn, Dae-Chul; Kim, Gun-Hee; et al, 한국 반도체 학술 대회, 한국 반도체 학술 대회, 2016-02-23

8
Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET

Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05

9
Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs

Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01

10
Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor

Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jinsu; Ahn, Dae-Chul; Park, Jun-Young; Hur, Jae; Kim, Myung-Su; et al, ACS NANO, v.10, no.12, pp.10894 - 10900, 2016-12

11
Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation

Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02

12
Ultra-fast erase method of SONOS flash memory by instantaneous thermal excitation = 열적 여기 현상을 이용한 빠른 동작속도의 전하 트랩형 플래시 메모리에 관한 연구link

Ahn, Dae-Chul; 안대철; et al, 한국과학기술원, 2016

13
Vertically Integrated Nanowire-Based Unified Memory

Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyuresearcher, NANO LETTERS, v.16, no.9, pp.5909 - 5916, 2016-09

14
Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory

Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Choi, Yang-Kyuresearcher, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.1, pp.Q1 - Q5, 2017

15
Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory

Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05

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