Browse "School of Electrical Engineering(전기및전자공학부)" byAuthor1532

Showing results 1 to 60 of 73

1
Backscattering Effects on the Aharonov-Bohm-type Interference Patterns in the Ballistic Limit

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, ICSMM-10 (10th International Conference on Superlattices, Microstructure, and Microdevices), ICSMM-10, 1997-07

2
Ballistic quantum transport in nano-scale Schottky barrier tunnel transistors

Ahn, C.; Shin, Mincheolresearcher, 5th IEEE Conference on Nanotechnology, 2005, v.2, pp.741 - 744, 2005-07-11

3
Calculation of Phonon Transmission in Si/PtSi Heterostructures

Oh, junghyun; Jang, MoonGyu; Shin, Mincheolresearcher, 18th International Workshop on Computational Electronics, IWCE, 2015-09-04

4
Channel engineering of silicon nanowire field effect transistor: Non-equilibrium Green's function study

Hong, K.-H.; Kim, J.; Lee, S.-H.; Jin, Y.-G.; Park, S.-I.; Shin, Mincheolresearcher; Suk, S.D.; et al, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, pp.1281 - 1283, 2006-10-23

5
Charge-solitons in Closed One-dimensional Tunnel Arrays

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, ICSMM-10, ICSMM-10, 1997-07

6
Co-tunneling effects on transport in the spin blockade regime

Oh, Jung Hyun; Bubanja, Vladimir; Shin, Mincheolresearcher; Lee, Seok-Heeresearcher, IEEE NANO 2011, IEEE, 2011-08-16

7
Computational Study of p-type Germanium Nanowire Field Effect Transistors

정주영; Shin, Mincheolresearcher, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06

8
Device characteristics of double-gate MOSFETs with Si-Dielectric interface model from first principle calculations

Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheolresearcher, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010-06-13

9
Device characteristics of nanoscale metal/insulator tunnel transistors in the ballistic quantum transport regime

Shin, Mincheolresearcher, China International Conference on Nanoscience and Technology, ChinaNANO 2005, no.PART 1, pp.525 - 528, 2005-06-09

10
Device simulation based on DFT-NEGF using equivalent transport model

Jeong, Woo-Jin; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol; Shin, Min-Cheolresearcher, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-08

11
Dual-Material Gate Schottky Barrier UTB DG MOSFETs with Ge and III-V Channel

Choi, Won Chul; Lee, Jaehyun; Shin, Mincheolresearcher, 2014 IEEE Silicon Nanoelectronics Workshop, IEEE, 2014-06-09

12
Edge Current in the Equilibrium Quantum Hall State

Lee, S; Kwon, HC; Park, KW; Shin, Mincheolresearcher; Yuk, J; Lee, EH, APS March Meeting, APS March Meeting, 1997-03

13
Effect of silicide/silicon hetero-junction structure on thermoelectricity

Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyun; Kim, Soojung; Jeon, Hyojin; et al, NANO-KOREA 2012, 2012-08-17

14
Effects of ionized impurity scattering on thermopower of Si nanowires

Oh, Jung Hyun; Shin, Mincheolresearcher; Jang, Moongyu, NANO-KOREA 2012, 2012-08-17

15
Effects of Strain for Nanowire Schottky Barrier p-MOSFETs

Seo, Junbeom; Srivastave, Pooja; Lee, Jaehyun; Jung, Hyo Eun; Kim, Seung chul; Lee, Kwang-Ryeol; Shin, Min-Cheolresearcher, ISPSA-2014, ISPSA-2014, 2014-12-08

16
Electrical Transport Properties of Chain-Shaped Tunnel-Junction Arrays

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, SQS (International Workshop on Physics and Applications of Semiconductor Quantum Structures), pp.0 - 0, SQS, 1998-10-01

17
Electron Diffraction due to a Reflection Grating in a Quantum Wire

Park, KW; Lee, S; Shin, Mincheolresearcher; Yuk, J; Kwon, HC; Lee, EH, IWPSD, IWPSD, 1997-12

18
Fabrication of Silicon Nanowire Based Thermoelectric Device and Temperature Sensor Calibration

최원철; Shin, Mincheolresearcher, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17

19
First-Principles Calculation of Schottky-Barrier Height of the Nanostructured Silicide-Si Junction

이재현; 김성철; Shin, Mincheolresearcher, 제 12회 고등과학원 전자구조계산학회, 고등과학원, 2016-06-16

20
Full Quantum Simulations of Silicon Schottky Barrier Nanowires with Surface Roughness Scattering

Jung, Hyo-Eun; Shin, Mincheolresearcher, NANO KOREA 2013, NANO KOREA, 2013-07-10

21
Full quantum-mechanical calculation of surface-roughness- limited mobility and mean-free-path in Si nanowire FETs

Shin, Mincheolresearcher, Nano-S&T 2012, 2012-10-25

22
Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations

Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheolresearcher, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.1109 - 1112, IEEE, 2010-08-17

23
Hole Effective Masses in the Transport Calculation of Si Nanowire pMOSFETs

Le, AT; 신민철researcher, NANO KOREA 2009, pp.1 - 2, NANO KOREA, 2009-08

24
Importance of ionized impurity scattering on resistivity of Si nanowires

Oh, Jung Hyun; Shin, Mincheolresearcher; Lee, Seok-Heeresearcher, International Workshop on Computational Electronics, IWCE, 2012-05-24

25
Injection locking of spin transfer nano-oscillators to a microwave current

강두형; Shin, Mincheolresearcher, 2013년 춘계한국물리학회, 한국물리학회, 2013-04-25

26
k.p Based Quantum Simulation of Silicon Nanowire pMOSFETs

Shin, Mincheolresearcher; Lee, S.; Klimeck, G., IEEE Conference on Nanotechnology, IEEE NANO 2009, pp.374 - 377, IEEE NANO, 2009-07-26

27
Magnetic Field Dependence of the Resistance Anomaly in Superconducting Mesoscopic Aluminum Structures

Lee, S; Park, KW; Shin, Mincheolresearcher; Lee, EH; Kwon, HC, NPE'97, NPE'97, 1997-09

28
Multi-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport

Kim, Byung-Hyun; Kim, Seungchul; Jung, Hyo Eun; Chung, YongChae; Shin, Min-Cheolresearcher; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

29
Multi-scale Simulation of Interfacial Roughness Effects in Silicon Nanowires

Kim, Byung-Hyun; Jung, Hyo-Eun; Chung, Yong-Chae; Shin, Mincheolresearcher; Lee, Kwnag-Ryeol, SISPAD 2012, 2012-09-06

30
Multi-subband Monte Carlo Simulations of Hole Mobility in Silicon Nanowire FETs

Ryu, Hoon; Jung, Ju-Young; Shin, Mincheolresearcher, IWCE-15, 2012-05-24

31
Multiple Coulomb Blockade Gaps in Small Tunnel Junction Arrays

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, ICSMM-11, ICSMM-11, 1998

32
Multiple Coulomb Gaps in Two-Dimensional Quantum Dot Arrays

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, APS March Meeting, APS March Meeting, 1998-03

33
Multiscale simulation of Schottky barrier tunnel transistors

Shin, Min-Cheolresearcher; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

34
NEGF Approach to Surface-Roughness-Limited Mean Free Path in Silicon Nanowire FETs

Hyo-Eun Jung; Shin, Mincheolresearcher, IEEE Nanotechnology Materials and Devices Conference 2013, NMDC, 2013-10-07

35
NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k·p method

Shin, Mincheolresearcher, 2009 13th International Workshop on Computational Electronics, IWCE 2009, pp.1 - 4, 2009-05-27

36
Non-Equilibrium Green's Function Approach to Surface-Roughness-Limited Mobility in Silicon Nanowire Field Effect Transistors

정효은; 신민철researcher, 제19회 한국반도체학술대회, 한국반도체학술대회, 2012-02-17

37
Performance Boosters for Nanoscale Schottky Barrier MOSFETs: Computational Study

Shin, Mincheolresearcher, AWAD 2014, AWAD, 2014-07-02

38
Phonon scattering at the interface between elastically dissimilar materias

Oh, Jung Hyun; Shin, Mincheolresearcher; Jang, Moon Kyu, 16th International Workshop on Computational Electronics, Univ. of Tokyo, 2013-07-05

39
Phonon scattering in Si nanowires due to surface roughness

Oh, Jung Hyun; Shin, Mincheolresearcher; Jang, Moongyu, NANO KOREA 2011, 2011-08-25

40
Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs

신민철researcher, NANO KOREA, 대한금속재료학회, 2010-08

41
Quantum simulation of hole transport in Si nanowire pMOSFETs

신민철researcher, 한국반도체학술대회, 한국반도체학술대회, 2010-02

42
Quantum simulation of nano-scale schottky barrier MOSFETs

Shin, Mincheolresearcher; Jang, M.; Lee, S., 2004 4th IEEE Conference on Nanotechnology, pp.396 - 398, 2004-08-16

43
Quantum Simulation of p-type Nanowire Schottky Barrier MOSFETs: Silicon versus Germanium Channel

이재현; Shin, Mincheolresearcher, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06

44
Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs

Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheolresearcher, 2014 IEEE Silicon Nanoelectronics Workshop, IEEE, 2014-06-09

45
Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior

Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheolresearcher, NANO KOREA 2014, NANO KOREA, 2014-07-03

46
Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects

Shin, Min-Cheolresearcher; Jung, Hyo Eun, ISPSA-2014, ISPSA-2014, 2014-12-08

47
Quantum Transport due to a Reflection Grating in a Quantum Wire

Park, K; Lee, S; Shin, Mincheolresearcher; Lee, EH; Yuk, J; Kwon, H, American Physical Society, APS March Meeting, American Physical Society, 1997-03-17

48
Quantum Transport in Nanowire p-type SchottkyBarrier MOSFETs with the k·p Method

Shin, Mincheolresearcher, 2010 14th International Workshop on Computational Electronics, IWCE 2010, pp.339 - 342, 2010 14th International Workshop on Computational Electronics, IWCE 2010, 2010-10-26

49
Quantum Transport of a Quantum Wire With a Reflection Grating

Lee, S; Park, KW; Shin, Mincheolresearcher; Lee, EH; Yuk, J; Kwon, HC, IWPSD-97, IWPSD-97, 1997-12

50
Quantum Transport of Holes in Nanoscale FETs: Dependence on Channel Orientation and Impact of Heavy-hole Light-hole Coupling

Shin, Mincheolresearcher, ACCMS-WGM 2011, 2011-04-01

51
Quantum-classicla crossover in biaxial nanospin system

Kang, Doo Hyung; Kim, Gwang-Hee; Shin, Mincheolresearcher, NANO KOREA 2011, Nano-Korea, 2011-08-25

52
Room Temperature Investigation of Single Electron Tunneling (SET) Effects in Ag Droplets Grown on The Passivated Silicon Surface

Park, KH; Ha, JS; Yun, WS; Shin, Mincheolresearcher; Park, KW; Lee, EH, STM, STM, 1997-07

53
Scaling studies of coaxially gated carbon nanotube MOSFETs

Ahn, C.; Shin, Mincheolresearcher, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.548 - 549, 2006-10-22

54
Simulation of dual material gate InAs Schottky barrier field effect transistor

최원철; 이재현; 신민철researcher, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25

55
Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations

최호원; 이재현; 이여름; 신민철researcher, 제21회 한국반도체학술대회, 한국반도체학술대회, 2014-02-25

56
Simulation Platform of Nano-devices as the Virtual Fab

Lee, Minho; Lee, Seungchul; Shin, Min-Cheolresearcher; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

57
Simulation study of ballistic hole current in p-type Germanium nanowire MOSFETs

Jung, Ju Young; Shin, Mincheolresearcher, NANO KOREA 2013, NANO KOREA, 2013-07-10

58
Simulations of Schottky-barrier nanowire field effect transistors

Lee, J.; Ahn, C.; Shin, Mincheolresearcher, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.552 - 553, 2006-10-22

59
Single Electron Charging Effect at Ag Droplets Grown on Sb-terminated Silicon Surface at Room Temperature

Park, KH; Ha, JS; Shin, Mincheolresearcher; Yun, WS; Lee, EH, AVS(Americal Vaccum Society), AVS(Americal Vaccum Society), 1997-10

60
Soliton dynamics in Closed Two-dimansional Tunnel Junction Arrays

Shin, Mincheolresearcher; Lee, S; Park, KW; Lee, EH, NPE'97(Nano-Physics and Electronics, '97), NPE'97, 1997-09

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