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Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim SJ; Cho, Byung Jin; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07 |
PVD HfO2 for high-precision MIM capacitor applications Kim SJ; Cho, Byung Jin; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06 |
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