Showing results 1 to 9 of 9
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF Lim, Sehee; Goh, Youngin; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Kim, Minki; Jeong, Yeongseok; et al, 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, pp.113 - 116, Institute of Electrical and Electronics Engineers Inc., 2022-09 |
Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook; Yang, Ji-Woon, SOLID-STATE ELECTRONICS, v.206, 2023-08 |
Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET Lee, Sangho; Kim, Giuk; Lee, Youngkyu; Shin, Hunbeom; Jeong, Youngseok; Zhang, Lingwei; Jung, Seong-Ook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.3, pp.1865 - 1871, 2024-03 |
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices Lim, Sehee; Goh, Youngin; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Jeong, Yeongseok; Shin, Hunbeom; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870, 2023-07 |
Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors Lee, Sangho; Lee, Youngkyu; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jung, Seong-Ook; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01 |
High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; Lim, Sehee; Jung, Seong-Ook; Jeon, Sanghun, 2021 IEEE International Electron Devices Meeting (IEDM), IEEE, 2021-12-11 |
Low Temperature and Ion-Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo-Sensor Circuits Han, Hoonhee; Cho, Byung-Jin; Choi, Rino; Jung, Seong-Ook; S. C. Song; Choi, Changhwan; Chung, SungWoo, 66th IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 2020-12-15 |
Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology Hwang, Junghyeon; Lim, Sehee; Kim, Giuk; Jung, Seong-Ook; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1049 - 1052, 2022-07 |
The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications Kim, Taeho; Kim, Giuk; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Lee, Sangho; Shin, Hunbeom; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02 |
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