Showing results 1 to 2 of 2
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Oh, Seungyeol; Kim, Taeho; Kwak, Myunghoon; Song, Jeonghwan; Woo, Jiyong; Jeon, Sanghun; Yoo, In Kyeong; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.6, pp.732 - 735, 2017-06 |
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo, Jiyong; Goh, Youngin; Im, Solyee; Hwang, Jeong Hyeon; Kim, Yeriaron; Kim, Jeong Hun; Im, Jong-Pil; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02 |
Discover