Showing results 16 to 21 of 21
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11 |
Role of hole fluence in gate oxide breakdown Li, MF; He, YD; Ma, SG; Cho, Byung Jin; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11 |
Time dependent hot-carrier induced interface state generation in deep submicron LDD nMOSFETs Kim, SH; Min, KS; Lee, Kwyro, SOLID-STATE ELECTRONICS, v.39, no.3, pp.405 - 410, 1996-03 |
Toward High-Output Organic Vertical Field Effect Transistors: Key Design Parameters Kwon, Hyukyun; Kim, Min-Cheol; Cho, Hyunsu; Moon, Hanul; Lee, Jongjin; Yoo, Seunghyup, ADVANCED FUNCTIONAL MATERIALS, v.26, no.38, pp.6888 - 6895, 2016-10 |
Tuning the electrode work function via a vapor-phase deposited ultrathin polymer film Baek, Jieung; Lee, Junseok; Joo, Munkyu; Han, Donggeon; Kim, Houngkyung; Seong, Hyejeong; Lee, Jinsup; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.4, pp.831 - 839, 2016-01 |
Tuning-free controller to accurately regulate flow rates in a microfluidic network Heo, Young Jin; Kang, Junsu; Kim, Min Jun; Chung, Wan Kyun, SCIENTIFIC REPORTS, v.6, pp.23273, 2016-03 |
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