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Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain Shin, Changho; Kim, Jeong-Kyu; Kim, Gwang-Sik; Lee, Hyunjae; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.11, pp.4167 - 4172, 2016-11 |
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