Showing results 2 to 2 of 2
Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 |
Discover