Showing results 3 to 7 of 7
Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
Local Growth of Graphene by Ion Implantation of Carbon in a Nickel Thin Film followed by Rapid Thermal Annealing Mun, Jeong-Hun; Lim, Sung-Kyu; Cho, Byung-Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.6, pp.G89 - G92, 2012-04 |
Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
Optical reflectance measurement of large-scale graphene layers synthesized on nickel thin film by carbon segregation Mun, Jeong-Hun; Hwang, Chan-Yong; Lim, Sung-Kyu; Cho, Byung-Jin, CARBON, v.48, no.2, pp.447 - 451, 2010-02 |
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
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