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Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09 |
MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES Yoon, Giwan; JOSHI, AB; KIM, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.14, no.4, pp.179 - 181, 1993-04 |
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