Browse "School of Electrical Engineering(전기및전자공학부)" by Subject s function (NEGF)
Showing results 1 to 5 of 5
| Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach Kim, Bokyeom; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468, 2020-02 |
| Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors Ahn, C; Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.5, no.3, pp.278 - 283, 2006-05 |
| First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit Ahn, Yongsoo; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.5, pp.2129 - 2134, 2017-05 |
| p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
| Surface-Roughness-Limited Mean Free Path in Silicon Nanowire Field Effect Transistors Jung, Hyo-Eun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.6, pp.1861 - 1866, 2013-06 |
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