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Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03 |
Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08 |
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