Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties

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In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I-V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2015-06
Language
English
Article Type
Article
Keywords

LOW SCHOTTKY-BARRIER; FABRICATION; SILICON; GROWTH; METALS; MOSFET; FILMS

Citation

ACTA MATERIALIA, v.92, pp.1 - 7

ISSN
1359-6454
DOI
10.1016/j.actamat.2015.03.041
URI
http://hdl.handle.net/10203/199455
Appears in Collection
EE-Journal Papers(저널논문)
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